2SC3775-4-TB-E-ON

Overview

The 2SC3775-4-TB-E-ON is an NPN epitaxial planar silicon bipolar RF transistor manufactured by onsemi. It is designed for radio frequency applications operating up to 5GHz. The device features a surface mount package identified as 3-CP, corresponding to the TO-236-3 form factor. Key electrical specifications include a collector-emitter voltage of 12V and a maximum collector current of 100mA. The component has a power dissipation rating of 250mW. It is categorized under Bipolar RF Transistors and Discrete Semiconductor Products.

Feature Summary

• Designed for UHF low-noise amplifier applications
• Suitable for wide-band amplifier circuits
• Small noise figure performance

Applications

• UHF Low-Noise Amplifier
• Wide-Band Amplifier Applications
• RF amplification circuits

Procurement Notes

Verify the manufacturer marking matches onsemi or Sanyo Denki specifications. Confirm the package type is TO-236-3 (SOT-23) with 3 contacts. Ensure the part number suffix aligns with the required tape and reel configuration if applicable. Cross-reference datasheets from both onsemi and Sanyo Semicon Device for parameter consistency. Check for any specific ordering suffixes that may affect availability or packaging.

Selection Notes

Select this component for high-frequency designs requiring low noise figures around 0.9GHz. Consider the 12V breakdown voltage and 100mA current limits for circuit biasing. Evaluate the 250mW power dissipation against thermal management requirements in the target application. Compare performance metrics with alternative RF transistors if higher frequency operation beyond 5GHz is needed.

Part Context

This part belongs to the 2SC3775 series of NPN RF transistors. It is available from manufacturers including onsemi and Sanyo Denki. The component is classified as a discrete semiconductor product within the bipolar RF transistor category. It shares design characteristics with other devices in the same family intended for similar radio frequency tasks.

Replacement Considerations

Direct substitutes are not explicitly confirmed in public documentation. Verify compatibility with equivalent NPN RF transistors offering similar noise figures and frequency ranges. Consult manufacturer cross-reference guides for potential alternatives.