2SC3776D

2SC3776D

$0.09
  • Description:NPN EPITAXIAL PLANAR SILICON
  • Series:*

SKU:ba6170172a21 Category: Brand:

  
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Product Detailed Parameters

  • Description:NPN EPITAXIAL PLANAR SILICON
  • Series:*
  • Mfr:Sanyo
  • Package:Bulk
  • Transistor Type:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Frequency - Transition:-
  • Noise Figure (dB Typ @ f):-
  • Gain:-
  • Power - Max:-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Current - Collector (Ic) (Max):-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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2SC3776D

Overview

The Sanyo 2SC3776D is an RF small signal bipolar transistor designed for ultra-high frequency band applications. It is a silicon NPN device housed in a TO-92 package with three pins. The component features a maximum collector current of 0.07 A and a collector-emitter voltage rating of 16 V. Key electrical characteristics include a minimum DC current gain (hFE) of 40, a maximum collector capacitance of 1 pF, and a maximum power dissipation of 0.4 W. The unit supports operating temperatures up to 150 °C and is characterized by low noise performance.

Feature Summary

  • Engineered for ultra-high frequency band operations
  • Optimized for low noise signal processing
  • Utilizes silicon NPN epitaxial planar technology

Applications

  • RF amplifier circuits
  • High-frequency signal processing stages
  • Low-noise front-end modules

Procurement Notes

Verify the specific suffix 'D' against official Sanyo documentation to confirm pinout or grading variations. Ensure compatibility with TO-92 mounting requirements. Confirm RoHS compliance status through current manufacturer declarations. Validate that the 0.07 A current limit aligns with circuit design constraints. Check for obsolescence notices from the original manufacturer.

Selection Notes

Select this component for designs requiring low noise performance in the ultra-high frequency range. Ensure the 16 V collector-emitter voltage exceeds peak circuit voltages. Verify that the 0.4 W power dissipation rating accommodates thermal management strategies. Consider the TO-92 package size for PCB layout constraints. Confirm hFE minimum of 40 meets gain requirements.

Part Context

This transistor belongs to the Sanyo discrete semiconductor lineup, specifically within the bipolar transistor category. It is manufactured by Sanyo Semiconductor, now part of Semicon Components Japan. The TO-92 package is standard for through-hole mounting in consumer and industrial electronics. The device serves as a fundamental building block for analog RF circuits.

Replacement Considerations

Consult official substitution lists for equivalent NPN RF transistors with matching TO-92 packaging. Verify that replacement parts maintain similar low noise figures and ultra-high frequency capabilities. Ensure voltage and current ratings are equal or superior. Confirm pinout compatibility to avoid redesign efforts.

2SC3776D2SC3776D
$0.09
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