2SC3784

Single Bipolar Transistors Overview

The onsemi 2SC3784 is a single NPN bipolar junction transistor (BJT) designed for through-hole mounting in the TO-126LP package. It features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 1.2 A. The device supports a transition frequency of 180 MHz and dissipates up to 1.2 W of power. Key electrical characteristics include a DC current gain of at least 1000 at 500 mA and 5 V, with a maximum collector cutoff current of 10 µA. The saturation voltage is specified at 1.5 V under standard test conditions.

Single Bipolar Transistors Feature Summary

• High DC current gain capability for efficient signal amplification
• Ultrahigh-speed switching performance suitable for RF applications
• Robust thermal stability with a high maximum junction temperature rating

Single Bipolar Transistors Applications

• General-purpose amplifier circuits
• Switching applications requiring fast response times
• RF signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement. Ensure the supplier provides valid traceability documentation matching the original onsemi manufacturing records.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN transistor is required for low-voltage, moderate-current applications. The TO-126LP package offers a balance between power dissipation capabilities and board space efficiency. Consider the 180 MHz transition frequency for suitability in radio frequency environments where faster switching speeds are necessary compared to standard audio-frequency transistors.

Single Bipolar Transistors Part Context

The 2SC3784 belongs to the family of small-signal to medium-power NPN transistors manufactured by onsemi. These devices are engineered using advanced silicon processes to deliver consistent performance across varying thermal conditions. The component serves as a fundamental building block in analog and digital circuit designs, providing reliable amplification and switching functions within defined electrical limits.

Single Bipolar Transistors Replacement Considerations

Consult the official onsemi cross-reference documentation for verified equivalent part numbers. Do not substitute with generic alternatives without verifying pinout compatibility and absolute maximum ratings. Ensure any replacement maintains the same package type and thermal characteristics to preserve circuit integrity.