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Product Detailed Parameters
- Description：RF TRANS NPN 11V 3.2GHZ SMT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：11V
- Frequency - Transition：3.2GHz
- Noise Figure (dB Typ @ f)：3.5dB @ 500MHz
- Gain：-
- Power - Max：200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：56 @ 5mA, 10V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SMT3
- Grade：-
- Qualification：-
Download product information
Overview
The ROHM Semiconductor 2SC3838KT146P is a high-frequency NPN silicon epitaxial planar transistor designed for surface-mount applications. It operates within a collector-emitter voltage of 11V and supports a maximum collector current of 50mA, with a power dissipation rating of 200mW at 25°C. The device features a transition frequency (fT) typically reaching 3.2GHz at 500MHz, making it suitable for UHF frequency conversion and local oscillator circuits. Packaged in the SOT-346 (SMT3) format, it exhibits low base resistance and output capacitance, ensuring high gain and minimal noise figure.
Feature Summary
- High transition frequency capability up to 3.2GHz
- Low base resistance and small output capacitance for high gain
- Optimized for low noise figure performance
Applications
- UHF frequency converter stages
- Local oscillator circuits
- High-frequency amplification modules
Procurement Notes
Verify the specific ordering suffix against the official ROHM datasheet to confirm package type and taping specifications. Ensure that ESD protection measures are integrated into the design, as the component is sensitive to electrostatic discharge. Confirm ambient temperature derating requirements before finalizing the procurement list.
Selection Notes
Select this component when designing circuits requiring high-speed switching or amplification in the UHF band. Consider the 11V collector-emitter voltage limit and 50mA current capacity during circuit planning. Evaluate the thermal management strategy, as power dissipation decreases significantly above standard ambient temperatures.
Part Context
This part belongs to the 2SC3838K series of high-frequency transistors manufactured by ROHM Semiconductor. It utilizes an epitaxial planar process on a silicon substrate, providing reliable performance in compact surface-mount packages. The product line is intended for general electronic equipment rather than specialized automotive or medical applications.
Replacement Considerations
Consult the official ROHM documentation for verified substitute part numbers. Do not assume compatibility based solely on package similarity; verify electrical parameters such as breakdown voltage and transition frequency.
FAQ
What is the typical transition frequency of the 2SC3838KT146P?
The typical transition frequency (fT) is 3.2GHz when measured at 500MHz.
Is the 2SC3838KT146P suitable for high-power applications?
No, the maximum power dissipation is rated at 200mW, limiting its use to low-power signal processing tasks.
What precautions should be taken regarding electrostatic discharge?
The product is electrostatic sensitive; proper grounding and isolation from charged objects are required during handling and storage.
