2SC3979

Single Bipolar Transistors Overview

The Panasonic 2SC3979 is a silicon NPN triple diffusion planar power transistor designed for high breakdown voltage and high-speed switching applications. It features a collector-base voltage of 900 V, a collector-emitter voltage of 800 V, and a continuous collector current rating of 3 A. The device supports a peak collector current of 5 A and offers a collector power dissipation of 40 W at 25°C case temperature. Key electrical characteristics include a transition frequency of 10 MHz, turn-on time of 0.7 µs, storage time of 2.5 µs, and fall time of 0.3 µs. It utilizes the TO-220F-A1 package.

Single Bipolar Transistors Feature Summary

• High-speed switching capability with optimized transient response times
• High collector-base voltage rating suitable for demanding power environments
• Wide safe operation area ensuring reliable performance under various load conditions
• Satisfactory linearity of forward current transfer ratio (hFE) across operating ranges

Single Bipolar Transistors Applications

• High-voltage high-speed switching circuits
• General electronic equipment requiring robust power transistors
• Office equipment power stages
• Communications equipment signal processing
• Measuring instruments power control

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distributors or official Panasonic channels. Confirm RoHS compliance status as indicated in the datasheet. Check for specific lifecycle stage updates such as planned maintenance or discontinuation via official manufacturer resources before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage isolation and fast switching speeds. Ensure thermal management strategies accommodate the specified power dissipation limits. Verify that the operating environment remains within the guaranteed junction temperature range to maintain performance stability and longevity.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic 2SC3979 series of silicon NPN transistors. It is engineered specifically for applications demanding high breakdown voltage combined with rapid switching capabilities. The triple diffusion planar technology contributes to its robust electrical characteristics and reliability in standard electronic equipment contexts.

Single Bipolar Transistors Replacement Considerations

Consult official Panasonic documentation for verified substitute part numbers. Cross-reference specifications carefully to ensure compatibility with existing circuit requirements.

Single Bipolar Transistors FAQ

What is the maximum collector-base voltage for the 2SC3979?

The maximum collector-base voltage (VCBO) with the emitter open is rated at 900 V.

Does the 2SC3979 comply with environmental directives?

Yes, the product complies with the RoHS Directive (EU 2002/95/EC).

What is the typical transition frequency (fT) of this transistor?

The transition frequency is typically 10 MHz when measured at VCE = 5 V, IC = 0.15 A, and f = 1 MHz.