2SC4004

Single Bipolar Transistors Overview

The Panasonic 2SC4004 is a silicon NPN triple diffusion planar transistor designed for high breakdown voltage and high-speed switching applications. It features an 800V collector-emitter voltage rating, a 1A continuous collector current capacity, and a 30W power dissipation limit in the TO-220F-A1 package. Key electrical characteristics include a transition frequency of 4MHz at 0.05A, a maximum collector-base cutoff current of 50µA, and a forward current transfer ratio (hFE) ranging from 3 to 6 depending on operating conditions.

Single Bipolar Transistors Feature Summary

• High-speed switching capability with wide safe operation area
• High collector-base voltage rating for robust performance
• Satisfactory linearity of forward current transfer ratio
• Full-pack package design allowing heat sink installation with a single screw

Single Bipolar Transistors Applications

• High-voltage switching circuits
• General electronic equipment
• Office equipment
• Communications equipment
• Measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the specific lifecycle status before procurement, as this component may be classified under maintenance or discontinued stages. Confirm that the intended application aligns with standard general-purpose electronics usage, as specialized sectors like aerospace or life support require separate consultation. Ensure compliance with RoHS directives and verify the latest product standards directly with the manufacturer prior to finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high collector-emitter voltage ratings up to 800V combined with moderate current handling capabilities. The device is suitable for applications demanding reliable high-speed switching within a standard thermal environment. Consider the thermal resistance characteristics and ensure appropriate heat sinking is utilized if ambient temperatures exceed standard operating ranges or if power dissipation approaches the maximum rated limits.

Single Bipolar Transistors Part Context

This transistor belongs to the category of silicon NPN power transistors utilizing triple diffusion planar technology. It is manufactured by Panasonic Electronic Components and is housed in a TO-220F-A1 package. The device is engineered to provide high reliability and consistent performance for standard industrial and commercial electronic applications requiring robust switching characteristics.

Single Bipolar Transistors Replacement Considerations

Consult official documentation for verified substitute part numbers. Cross-referencing should strictly adhere to manufacturer-approved equivalents to ensure compatibility with voltage, current, and thermal specifications.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) with the base open is 800V.

What is the transition frequency of the device?

The transition frequency (fT) is 4MHz when measured at VCE = 10V, IC = 0.05A, and f = 1MHz.

Is this component compliant with environmental directives?

Yes, the product complies with the RoHS Directive (EU 2002/95/EC).