2SC4102T106R

Single Bipolar Transistors Overview

The 2SC4102T106R is a single NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It is housed in an SOT-323 (UMT3) surface-mount package with three terminals. The device supports a maximum collector current of 50 mA and offers a high collector-emitter breakdown voltage of 120 V. Key electrical parameters include a DC current gain (hFE) ranging from 180 to 560, a transition frequency of 140 MHz, and a power dissipation capacity of 200 mW. The component operates at temperatures up to +150°C and complies with RoHS standards.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability for amplifier applications
• Complementary pairing with the 2SA1579 PNP transistor
• Compact surface-mount packaging for space-constrained designs

Single Bipolar Transistors Applications

• High-voltage amplifier circuits
• General-purpose switching applications
• Complementary pairs with 2SA1579

Single Bipolar Transistors Procurement Notes

Verify the specific suffix T106R against the manufacturer's datasheet to confirm the reel quantity and tape specifications. Confirm RoHS compliance status as required by project regulations. Check for any obsolescence notices or last-time buy recommendations directly from ROHM Semiconductor before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when a small-footprint NPN transistor requires a 120 V collector-emitter rating. Ensure the design accommodates the 200 mW power dissipation limit within the thermal constraints of the SOT-323 package. Verify that the 140 MHz transition frequency meets the signal bandwidth requirements of the intended circuit application.

Single Bipolar Transistors Part Context

This part belongs to the 2SC4102 series of high-voltage amplifier transistors produced by ROHM Semiconductor. It is designed as a complementary pair to the 2SA1579 PNP transistor, facilitating balanced circuit designs. The series utilizes silicon technology and is packaged in the UMT3 form factor, targeting compact electronic devices requiring reliable high-voltage performance.

Single Bipolar Transistors Replacement Considerations

The 2SC4102U3T106R is documented as a similar substitute part number within the same product family.