2SC4117-GR,LF

Single Bipolar Transistors Overview

The Toshiba 2SC4117-GR,LF is a silicon NPN epitaxial transistor utilizing the PCT process. It features a collector-emitter voltage of 120 V and a maximum collector current of 100 mA. The device offers a DC current gain ranging from 200 to 400 and a transition frequency of 100 MHz. Electrical characteristics include a collector cut-off current of 0.1 µA and a noise figure of 1 dB typical. It operates within a junction temperature range up to 150 °C when mounted on an FR4 board.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability with a collector-emitter rating of 120 V
• Excellent hFE linearity ensuring consistent performance across current levels
• Low noise figure suitable for sensitive audio frequency applications
• Complementary pairing available with the 2SA1587 PNP transistor

Single Bipolar Transistors Applications

• Audio frequency general purpose amplifiers
• Automotive electronic circuits requiring AEC-Q101 qualification
• Small package signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific GR binning classification (hFE 200 to 400) against design requirements. Confirm that the LF suffix indicates lead-free compliance and associated thermal ratings. Ensure the application circuit accounts for the specified power dissipation limits relative to the mounting environment and ambient temperature conditions defined in the datasheet.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage handling in a compact SC-70 package. The GR variant provides a specific gain band distinct from the BL option. Consider the low noise figure for pre-amplification stages where signal integrity is critical. Verify compatibility with the complementary 2SA1587 if push-pull configurations are utilized in the system architecture.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SC4117 series of NPN transistors designed for audio and general-purpose amplification. It utilizes the PCT process technology to achieve high reliability and performance metrics. The series is noted for its small physical footprint and robust electrical characteristics suitable for modern electronic assemblies.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SA1587 as the complementary PNP counterpart. No direct substitute part numbers are documented in the provided source material.