2SC4132T100R

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SC4132T100R is a PNP power transistor designed for high-voltage applications. It features a collector-emitter breakdown voltage of 120V and a continuous collector current rating of 1A. The device offers a transition frequency of 80MHz and low output capacitance, making it suitable for switching circuits. Packaged in the MPT3 (SOT-89) surface-mount format with a reel quantity of 1000 units, it complements the 2SB1236 NPN counterpart.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability up to 120V
• Low collector output capacitance for efficient switching
• High transition frequency supporting fast operation

Single Bipolar Transistors Applications

• High-voltage switching circuits
• Complementary driver stages paired with 2SB1236
• Power amplifier output stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix T100 against the manufacturer's latest documentation to confirm packaging details and hFE binning. Ensure compatibility with existing thermal management designs, as power dissipation ratings depend on mounting conditions. Confirm RoHS compliance status through official datasheets before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 120V blocking capability and 1A current handling is required. Consider its complementary relationship with the 2SB1236 for push-pull configurations. Evaluate the MPT3 package size constraints and verify that the 80MHz transition frequency meets the specific circuit speed requirements.

Single Bipolar Transistors Part Context

This part belongs to the ROHM power transistor family, specifically engineered for general-purpose high-voltage switching. It serves as the PNP complement to the 2SD1857/2SB1236 series, providing matched characteristics for balanced performance in dual-transistor applications within compact surface-mount footprints.

Single Bipolar Transistors Replacement Considerations

The 2SB1236 is documented as the complementary pair. Verify pinout and electrical parameters against alternative PNP transistors offering similar 120V ratings and SOT-89 packaging before substitution.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter breakdown voltage (BVCEO) is 120V.

Which transistor does this model complement?

It is designed to complement the 2SB1236 NPN transistor.

What is the typical output capacitance?

The typical collector-output capacitance is 20pF at VCB = 10V.