2SC4135S-E

Single Bipolar Transistors Overview

The onsemi 2SC4135S-E is an NPN bipolar junction transistor designed for high-voltage switching applications. It features a maximum collector-emitter voltage of 100 V and a maximum DC collector current of 2 A. The device utilizes TP-FA through-hole packaging with dimensions of 6.5 x 2.3 x 5.5 mm. Key electrical parameters include a maximum collector-base voltage of 120 V, a maximum emitter-base voltage of 6 V, and a power dissipation rating of 1 W. The minimum DC current gain ranges from 140 to 200, with a maximum operating temperature of +150 °C.

Single Bipolar Transistors Feature Summary

• Designed for high-voltage switching applications using FBET and MBIT processes
• Low collector-emitter saturation voltage for efficient operation
• Single NPN configuration in a robust through-hole package

Single Bipolar Transistors Applications

• High-voltage switching circuits
• General purpose amplifier stages
• Power supply output regulation

Single Bipolar Transistors Procurement Notes

Verify the specific suffix (E vs TL-E) as variants may differ in specifications or availability. Note that some sources indicate this component series is scheduled for obsolescence by the manufacturer. Confirm current stock status and lead times with authorized distributors before finalizing procurement plans to avoid supply chain disruptions.

Single Bipolar Transistors Selection Notes

Select this component when a 100 V NPN transistor with 2 A current capability is required in a through-hole format. Ensure the application does not exceed the 1 W power dissipation limit without adequate thermal management. Compare against the complementary PNP 2SA1593 if push-pull configurations are needed. Verify that the 120 MHz gain bandwidth product meets the signal frequency requirements.

Single Bipolar Transistors Part Context

This part belongs to the general-purpose low VCE(sat) transistor family from onsemi. It is often paired with its PNP counterpart, the 2SA1593, for complementary symmetry applications. The device is manufactured using advanced FBET and MBIT processes to enhance performance and reliability in standard electronic assemblies.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not explicitly listed in the provided documentation. Users should consult official cross-reference guides or contact onsemi directly for validated replacements, especially given the noted obsolescence status of certain variants.