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2SC4135S-TL-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 100V 2A TP-FA. Review the specifications below when checking this part for your BOM.
The 2SC4135S-TL-E is a small signal NPN epitaxial planar silicon transistor manufactured by onsemi. It utilizes the FBET and MBIT processes to achieve high breakdown voltage and large current capacity with fast switching speeds. The device is housed in a compact TP-FA package, facilitating the design of smaller electronic sets. Key electrical characteristics include a collector-to-emitter voltage rating of 100V, a maximum collector current of 2A, and a minimum DC current gain (hFE) of 140.
Verify the manufacturer designation carefully, as the component was originally produced by Sanyo Semiconductor, which became part of onsemi. Confirm that the specific suffix matches the required tape-and-reel packaging format for automated surface-mount assembly. Ensure the datasheet version aligns with the current product lifecycle status before finalizing procurement specifications.
Select this component when a robust NPN transistor with a 100V collector-emitter voltage rating and 2A continuous current capability is required. The low hFE minimum of 140 makes it suitable for applications demanding reliable gain without excessive variability. The compact physical footprint allows for integration into space-constrained designs where standard packages would not fit.
This device belongs to the family of small signal bipolar transistors designed for general-purpose use. It represents the evolution of Sanyo's 2SC4135 series following corporate restructuring. The technology leverages epitaxial planar structures to ensure stability and performance consistency across varying operating temperatures and load conditions.
Direct substitutes include the 2SC4135STP-FA and other variants within the 2SC4135 series from onsemi or legacy Sanyo stock. Verify pinout compatibility and thermal resistance ratings when cross-referencing with generic NPN transistors having similar Vceo and Ic specifications.
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