2SC4140

Single Bipolar Transistors Overview

The Sanken Electric USA Inc. 2SC4140 is a Silicon NPN Triple Diffused Planar Transistor designed for high voltage and high speed switching applications. It features a collector-emitter breakdown voltage of 400V minimum, a continuous collector current rating of 18A (36A pulse), and a maximum power dissipation of 130W at 25°C case temperature. The device utilizes the MT-100 (TO-3P) package with a flange mount configuration. Key electrical characteristics include a DC current gain (hFE) ranging from 10 to 30, a typical transition frequency (fT) of 10MHz, and a collector-base capacitance of 165pF. The junction temperature range extends from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Triple diffused planar silicon construction ensures robust performance under high voltage conditions.
• High speed switching capability supported by optimized storage time and transition frequency.
• Wide safe operating area (ASO) provides durability against breakdown during transient events.

Single Bipolar Transistors Applications

• Switching regulators
• General purpose high voltage switching circuits

Single Bipolar Transistors Procurement Notes

Verify the component datasheet directly from Sanken Electric USA Inc. official documentation to confirm absolute maximum ratings and electrical characteristics. Ensure the MT-100 (TO-3P) package dimensions match your thermal management requirements. Confirm that the part meets specific environmental or qualification standards required for your design, as general availability does not imply specific certification compliance without explicit documentation.

Single Bipolar Transistors Selection Notes

Select this transistor when designing circuits requiring high voltage handling up to 400V and significant current capacity up to 18A. Consider the thermal resistance and power derating curves if operating without an infinite heatsink. The TO-3P package facilitates direct mounting to heat sinks for effective thermal management in high-power switching environments.

Single Bipolar Transistors Part Context

The 2SC4140 belongs to the family of Silicon NPN Power Transistors manufactured by Sanken Electric USA Inc. It is specifically engineered as a triple diffused planar transistor, distinguishing it from standard planar types by offering improved ruggedness and switching performance. This component is categorized under high voltage discrete semiconductors intended for power conversion and control applications.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Consult Sanken Electric technical support or authorized distributors for verified equivalent components if the 2SC4140 is unavailable.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage (VCEO) for the 2SC4140?

The minimum collector-emitter breakdown voltage (V(BR)CEO) is rated at 400V.

Does the 2SC4140 support high-speed switching operations?

Yes, it is described as a high-speed switching transistor with a typical transition frequency (fT) of 10MHz and defined switching times for ton, tstg, and tf.

What package type is used for the 2SC4140?

The component uses the MT-100 package, which corresponds to the TO-3P form factor with a flange mount configuration.