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Product Detailed Parameters
- Description：RF TRANS NPN 15V SC-70
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 5mA, 3V
- Current - Collector (Ic) (Max)：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70
- Grade：-
- Qualification：-
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Overview
The 2SC4184-T1-A is an NPN silicon bipolar RF transistor manufactured by Renesas Electronics Corporation. Designed for surface-mount applications, it utilizes the SC-70 (SOT-323) package to provide a compact footprint suitable for space-constrained circuitry. The device features a collector-emitter breakdown voltage of 15V and is specifically engineered for use as a mixer in UHF and VHF frequency bands.
Feature Summary
- NPN silicon construction optimized for radio frequency signal processing
- Surface-mount design utilizing the SC-70 package for miniaturization
- Engineered specifically for UHF and VHF mixer applications
Applications
- UHF mixer circuits
- VHF mixer circuits
- RF signal processing modules
Procurement Notes
Verify the specific manufacturer source when ordering, as the component history involves transitions between Renesas Technology Corp. and Renesas Electronics Corporation. Confirm that the SC-70 package variant matches your PCB layout requirements. Ensure compliance with RoHS status definitions applicable to the specific production batch, as legacy documentation may list varying environmental compliance statuses.
Selection Notes
Select this component for designs requiring a low-profile NPN RF transistor dedicated to mixing functions within the UHF and VHF spectrum. The 15V breakdown rating defines the maximum operating limits. Consider the thermal characteristics inherent to the small SC-70 package when determining heat dissipation strategies for high-density layouts.
Part Context
This part belongs to the family of silicon bipolar transistors produced by Renesas Electronics Corporation. It represents a transition from earlier manufacturing entities such as Renesas Technology Corp., which merged into the current corporate structure. The component serves as a specialized discrete semiconductor solution for analog radio frequency front-end stages.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires consulting official Renesas replacement guides or distributor-specific compatibility matrices.
