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The 2SC4215-O(TE85L,F) is a silicon NPN epitaxial planar bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It is housed in the USM (Ultra Small Miniature) surface-mount package, specifically SC-70-3. The device features a maximum collector-emitter voltage of 30 V and a collector-base voltage of 40 V. It supports a continuous collector current of 20 mA with a power dissipation rating of 100 mW. The transition frequency is specified at 550 MHz, enabling high-speed switching applications. Operating temperatures range from -55°C to +125°C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation. Check for End-of-Life (EOL) notifications as the product may be subject to discontinuation. Ensure storage conditions adhere to moisture sensitivity levels defined in the datasheet to prevent package damage during soldering processes.
Select this component when a small-form-factor NPN transistor with moderate current handling and high transition frequency is required. Compare against alternatives based on package compatibility and thermal resistance values. Ensure the application voltage does not exceed the 30 V collector-emitter limit. Consider the 100 mW power dissipation constraint for thermal management design in dense PCB layouts.
This part belongs to Toshiba's discrete semiconductor portfolio, specifically within the small-signal transistor category. The TE85L suffix indicates the specific tape-and-reel packaging configuration used for high-volume surface-mount production. It complements other USM packaged devices designed for space-constrained consumer and industrial electronics.
Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult Toshiba's official replacement guide or contact technical support for qualified cross-reference recommendations before implementing alternative components.