2SC4224M-E

Single Bipolar Transistors Overview

The onsemi 2SC4224M-E is a high-voltage NPN silicon power bipolar transistor designed for demanding switching applications. It features a collector-emitter breakdown voltage of 800 V and supports a continuous collector current of 3 A. The device utilizes a TO-220MF surface-mount package, providing robust thermal performance with a maximum power dissipation capability of 50 W. It operates reliably within a junction temperature range extending up to +150 °C, ensuring stability in high-stress environments.

Single Bipolar Transistors Feature Summary

• High-voltage NPN silicon construction rated for 800 V collector-emitter breakdown
• Surface-mount TO-220MF package optimized for efficient heat dissipation
• Capable of handling 3 A continuous collector current for power control
• Designed for high-reliability operation at elevated temperatures

Single Bipolar Transistors Applications

• Power factor correction circuits
• High-voltage DC-DC converter topologies
• Industrial motor drive systems

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'E' against official manufacturer documentation to confirm exact binning or environmental compliance status. Confirm that the TO-220MF package variant matches your PCB footprint requirements. Ensure the component meets all relevant safety certifications required for your final equipment assembly before integration.

Single Bipolar Transistors Selection Notes

Select this component when an NPN transistor requires 800 V blocking capability in a compact surface-mount form factor. The TO-220MF package offers a balance between thermal management and board space efficiency compared to traditional through-hole options. Evaluate the 3 A current rating against peak load requirements to ensure adequate margin for reliable long-term operation.

Single Bipolar Transistors Part Context

This part belongs to the broader category of discrete power transistors manufactured by onsemi. It serves as a fundamental building block for power electronics, distinct from integrated circuits or passive components. The device is engineered specifically for high-voltage switching duties where standard low-voltage transistors would fail due to breakdown constraints.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.