2SC4226-A

2SC4226-A

  • Description:RF TRANS NPN 12V 4.5GHZ SC-70 -3
  • Series:-

SKU:1c19cea29d11 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 12V 4.5GHZ SC-70 -3
  • Series:-
  • Mfr:CEL
  • Package:Strip
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:4.5GHz
  • Noise Figure (dB Typ @ f):1.2dB @ 1GHz
  • Gain:9dB
  • Power - Max:150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 7mA, 3V
  • Current - Collector (Ic) (Max):100mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70-3
  • Grade:-
  • Qualification:-

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2SC4226-A

Overview

The 2SC4226-A is an RF NPN silicon bipolar transistor manufactured by CEL. It is designed for high-frequency radio frequency applications operating up to 4.5 GHz. The component is suitable for use in RF amplifiers and low noise amplifier circuits within VHF and UHF bands. It utilizes a surface mount package format appropriate for high-density assembly environments.

Feature Summary

  • Designed for high-frequency radio frequency applications
  • Suitable for VHF and UHF low noise amplifier circuits
  • Optimized for high-density surface mount assembly

Applications

  • RF amplifiers
  • VHF low noise amplifiers
  • UHF low noise amplifiers

Procurement Notes

This component is classified as obsolete and is no longer manufactured by the producer. Availability is limited to existing stock or substitute alternatives. Verify end-of-life status and lead times with authorized distributors before integration into new designs.

Selection Notes

Select this part for legacy designs requiring specific RF performance characteristics at frequencies up to 4.5 GHz. Ensure compatibility with existing circuit topologies for VHF and UHF low noise amplification. Consider pinout and thermal requirements for surface mount implementation.

Part Context

The 2SC4226-A belongs to the family of RF bipolar transistors intended for communication systems. It shares functional similarities with other NPN silicon devices optimized for low noise and high gain in microwave frequency ranges. The device supports compact electronic module construction.

Replacement Considerations

Public confirmed substitutes include BFP196WNH6327XTSA1 from Infineon Technologies. Evaluate electrical parameter matching and pin compatibility when transitioning to alternative components.

2SC4226-A2SC4226-A

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