2SC4226-T1-A

Overview

The CEL 2SC4226-T1-A is an NPN silicon epitaxial planar transistor designed for high-frequency low-noise amplification in VHF and UHF applications. Manufactured using NESAT passivation technology, it features a small reverse transfer capacitance suitable for RF modules and radar systems. The device is housed in a compact SOT-323 (SC-70) surface-mount package. Key electrical specifications include a characteristic frequency of 8 GHz and a noise figure of 1.9 dB at 1 GHz. It supports a maximum collector current of 35 mA with a total power dissipation of 150 mW. The breakdown voltage ratings are 10 V for collector-emitter, 20 V for collector-base, and 1.5 V for emitter-base.

Feature Summary

• NESAT passivation process ensures stable performance and reliability
• Optimized for high-frequency broadband low-noise amplification
• Compact SOT-323 package facilitates high-density surface mounting

Applications

• VHF/UHF low-noise amplifier circuits
• CATV signal processing
• Radar sensing switches
• Wireless security system front-ends
• RF module amplification

Procurement Notes

Verify the manufacturer origin as CEL when sourcing this component, noting that the original design originated from NEC and was later transferred to Renesas Electronics. Confirm the specific suffix -T1-A corresponds to the required tape-and-reel packaging format. Ensure compatibility with standard SMT assembly processes given the SC-70 footprint dimensions.

Selection Notes

Select this component for designs requiring low noise figures below 2 dB at 1 GHz. Compare the 8 GHz transition frequency against circuit requirements to ensure adequate gain at target operating frequencies. Evaluate the 150 mW power dissipation limit against thermal management capabilities in the final enclosure to prevent junction temperature exceedance during continuous operation.

Part Context

This part belongs to the family of ultra-high-frequency NPN transistors originally developed by NEC. Following the merger of NEC Electronics and Renesas Technology, production rights were assumed by Renesas Electronics. CEL manufactures compatible versions utilizing similar epitaxial planar structures. These devices are standard components in RF frontend architectures requiring miniaturization and high linearity.

Replacement Considerations

Direct substitutes include the Renesas Electronics 2SC4228. Verify pinout compatibility and electrical parameter tolerances before substitution. Other manufacturers may offer equivalent SOT-323 NPN RF transistors, but specific noise figure and frequency response data must be cross-referenced to ensure functional parity.