2SC4226

Overview

The EVVO 2SC4226 is an NPN silicon epitaxial planar transistor designed for high-frequency low-noise amplifier applications. It operates with a collector-emitter voltage of 12V and supports a continuous collector current of 100mA, dissipating up to 150mW of power. The device features a transition frequency of 4.5GHz and a typical noise figure of 1.2dB at 1GHz. Packaged in the SOT-323 surface-mount format, it maintains a junction temperature range from -65°C to +150°C.

Feature Summary

• Low noise performance suitable for sensitive signal amplification
• High gain characteristics optimized for RF stages
• Small mini mold package enabling high-density surface mount assembly

Applications

• High frequency low noise amplifier circuits
• VHF and UHF receiver front ends
• RF signal processing modules

Procurement Notes

Verify the specific hFE binning classification required for your design, as the datasheet defines distinct ranges marked R23, R24, and R25. Confirm that the SOT-323 footprint matches your PCB layout constraints. Ensure thermal management strategies account for the 150mW maximum dissipation limit under operating conditions.

Selection Notes

Select this component when designing VHF or UHF stages requiring minimal signal degradation. The 4.5GHz transition frequency supports wideband operations. Consider the DC current gain minimum of 40 when calculating bias networks. The 12V breakdown voltage limits supply headroom compared to higher-voltage alternatives.

Part Context

This component belongs to the family of NPN silicon epitaxial planar transistors manufactured by EVVO. It shares the general structural architecture of similar RF bipolar junction transistors but is specifically tuned for low noise and high gain metrics within the SOT-323 form factor.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.