2SC4227-A

Description：RF TRANS NPN 10V 7GHZ SC-70
Series：-

SKU:de39fba6026a Category: Bipolar RF Transistors Brand: CEL

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 10V 7GHZ SC-70
Series：-
Mfr：CEL
Package：Strip
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：10V
Frequency - Transition：7GHz
Noise Figure (dB Typ @ f)：1.4dB @ 1GHz
Gain：12dB
Power - Max：150mW
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 7mA, 3V
Current - Collector (Ic) (Max)：65mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：SC-70
Grade：-
Qualification：-

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2SC4227-A

Overview

The 2SC4227 is an NPN epitaxial silicon RF transistor designed for high-frequency low-noise amplification in VHF and UHF applications. It utilizes a 3-pin Super Minimold package suitable for high-density surface mount assembly. Key electrical characteristics include a typical noise figure of 1.4 dB and an insertion power gain of 12 dB at 1 GHz, measured under conditions of VCE = 3 V and IC = 7 mA. The device features a gain bandwidth product (fT) ranging from 4.5 to 7.0 GHz. Absolute maximum ratings specify a collector-to-emitter voltage of 10 V, a collector current limit of 65 mA, and a total power dissipation of 150 mW.

Feature Summary

Optimized for high-frequency low-noise amplification in VHF and UHF bands
Provides high small-signal gain with a typical insertion power gain of 12 dB at 1 GHz
Utilizes a compact 3-pin Super Minimold package for high-density surface mount assembly

Applications

VHF low noise amplifier circuits
UHF low noise amplifier circuits
High-frequency signal processing systems

Procurement Notes

Verify the specific ordering suffix when purchasing. The base part number 2SC4227 is available in non-reel quantities of 50 pieces. The variant 2SC4227-T1 is supplied on reels containing 3,000 pieces. Confirm that the pin orientation matches the requirement for Pin 3 (Collector) facing the perforation side of the tape if using the reel configuration.

Selection Notes

Select this component for designs requiring low noise figures around 1.4 dB at 1 GHz. Ensure the operating point aligns with the specified test conditions of VCE = 3 V and IC = 7 mA to achieve the rated performance. Consider the 150 mW power dissipation limit and the thermal characteristics of the Super Minimold package during layout.

Part Context

This component was originally manufactured by NEC Compound Semiconductor Devices. Following the merger on April 1st, 2010, Renesas Electronics Corporation assumed all business operations and documentation responsibilities. The datasheet retains the original NEC branding but is officially issued by Renesas Electronics.