2SC4228-A

2SC4228-A

  • Description:RF TRANS NPN 10V 8GHZ SC-70-3
  • Series:-

SKU:c8f929539151 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 10V 8GHZ SC-70-3
  • Series:-
  • Mfr:CEL
  • Package:Strip
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):10V
  • Frequency - Transition:8GHz
  • Noise Figure (dB Typ @ f):1.9dB @ 2GHz
  • Gain:7.5dB
  • Power - Max:150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 5mA, 3V
  • Current - Collector (Ic) (Max):35mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70-3
  • Grade:-
  • Qualification:-

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2SC4228-A

Overview

The CEL 2SC4228-A is a silicon NPN epitaxial planar transistor designed for ultra-high frequency low-noise amplification. It features a characteristic frequency of 8 GHz and a noise figure of 1.9 dB at 1 GHz. The device operates with a maximum collector-emitter voltage of 10 V, a collector-base breakdown voltage of 20 V, and an emitter-base breakdown voltage of 1.5 V. Maximum power dissipation is rated at 150 mW, with a maximum continuous collector current of 35 mA. The DC current gain (hFE) ranges from 40 to 250. It utilizes NESAT™ passivation technology and is housed in an SOT-323 (SC-70) surface-mount package.

Feature Summary

  • NESAT™ passivation process for high reliability
  • Small reverse transfer capacitance for stability
  • High power gain and low noise characteristics
  • Compact SOT-323 surface-mount packaging

Applications

  • VHF/UHF low-noise amplifiers
  • CATV signal processing
  • Radar sensing switches
  • Wireless security systems
  • RF module front ends

Procurement Notes

Verify the manufacturer origin carefully, as the original design belongs to NEC/Renesas. Confirm that the specific suffix 'A' corresponds to the intended hFE binning or quality tier required by your circuit design. Ensure the component matches the specified SOT-323 footprint and electrical limits before integration.

Selection Notes

Select this component when designing circuits requiring high-frequency operation up to 8 GHz with minimal noise interference. The 10 V collector-emitter rating suits low-voltage RF applications. Verify that the 150 mW power dissipation capability aligns with the thermal management strategy of the target PCB layout.

Part Context

Originally developed by NEC Electronics, this part was transferred to Renesas Electronics following their 2010 merger. CEL manufactures compatible versions of this legacy specification. The device remains a standard choice for compact, high-performance RF amplification in consumer electronics and communication hardware.

Replacement Considerations

Direct substitutes include the Renesas 2SC4228. Other manufacturers such as Inchange Semiconductor and SLKOR offer equivalent models. Verify pinout compatibility and exact electrical parameter matching before swapping.

2SC4228-A2SC4228-A

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