2SC4308TZ-E

Overview

The 2SC4308TZ-E is a silicon NPN epitaxial planar RF transistor manufactured by Renesas Electronics Corporation. Designed for high-frequency applications, this component operates with a maximum collector-emitter voltage of 20V and supports a continuous collector current of 300mA. It features a cutoff frequency capability up to 2.5GHz and handles a power dissipation of 600mW. The device utilizes a TO-92 through-hole package, making it suitable for standard PCB mounting configurations in consumer electronics and communication modules requiring reliable small-signal amplification.

Feature Summary

• Utilizes silicon NPN epitaxial planar technology for stable RF performance
• Optimized for high-frequency signal processing up to 2.5GHz
• Designed for low-power dissipation environments at 600mW
• Supports through-hole mounting via TO-92 package structure

Applications

• RF signal amplification in consumer electronics
• Small-signal processing in communication modules
• High-frequency oscillator circuits
• General-purpose radio frequency switching applications

Procurement Notes

Verify the exact datasheet version directly from Renesas Electronics Corporation or authorized distributors before integration. Confirm that the TO-92 package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the 600mW power dissipation limit under worst-case operating conditions. Check RoHS3 compliance status if environmental regulations apply to your specific manufacturing region or end-product certification needs.

Selection Notes

Select this component when designing circuits requiring NPN bipolar junction transistors with specific RF characteristics up to 2.5GHz. Consider the TO-92 package constraint for assembly methods and board space availability. Evaluate the 20V voltage rating against your circuit's peak signal levels to prevent breakdown. Compare the 300mA current capacity with your load requirements to ensure adequate drive capability without exceeding thermal limits during continuous operation.

Part Context

This part belongs to Renesas' discrete semiconductor portfolio, specifically within the bipolar junction transistor category. It serves as a fundamental active component for analog and RF circuit design. Unlike integrated solutions, this single transistor offers flexibility for custom amplifier stages. Its classification as an epitaxial planar device indicates a manufacturing process optimized for speed and voltage handling typical of mid-range RF applications rather than high-power industrial uses.

Replacement Considerations

Consult official cross-reference lists provided by Renesas for verified substitutes. Generic replacements may differ in gain bandwidth product or noise figures. Verify pinout compatibility to avoid soldering errors. Ensure substitute components meet the same 20V and 300mA ratings. Do not assume functional equivalence based solely on package similarity.