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The Panasonic 2SC441000L is a silicon NPN epitaxial planar transistor designed for UHF amplification. It operates with low voltage and small current, featuring a high transition frequency of 4 GHz at VCE = 1 V and IC = 1 mA. The device provides a maximum unilateral power gain of 15 dB and a noise figure of 3.5 dB at 800 MHz. It supports a collector current of 10 mA and a collector power dissipation of 50 mW. The component is housed in an S-Mini (EIAJ SC-70) package with three pins.
Verify the specific ordering suffix to confirm packaging type, as tape or magazine packing options exist. Confirm the latest lifecycle status directly with the manufacturer before finalizing procurement plans. Ensure electrostatic discharge precautions are observed during handling due to the component's structural sensitivity.
Select this component when designing circuits requiring high-frequency performance at low bias currents. Verify that the required collector-emitter voltage does not exceed 7 V and that thermal management accommodates the 50 mW power dissipation limit. Ensure the operating environment remains within the specified junction temperature range of up to 150 °C.
This component belongs to the Panasonic 2SC4410 series of silicon NPN transistors. It utilizes an epitaxial planar structure optimized for radio frequency applications. The product complies with the RoHS Directive and is intended for standard commercial electronics rather than specialized aerospace or life-support systems.
Consult official cross-reference documentation for verified substitutes. Direct replacements must match the SC-70 package dimensions and maintain equivalent RF characteristics at 800 MHz.