2SC4429M

Single Bipolar Transistors Overview

The onsemi 2SC4429M is a high-voltage NPN power bipolar transistor designed for demanding switching applications. It features an 800V collector-emitter breakdown voltage and supports a continuous collector current of 8A. The device utilizes a plastic epoxy package with three pins, suitable for through-hole mounting. It operates within a junction temperature range extending up to 150°C and offers a maximum power dissipation of 60W at 25°C ambient conditions. This component is engineered for robust performance in high-reliability environments.

Single Bipolar Transistors Feature Summary

• High voltage capability with 800V collector-emitter breakdown rating
• Robust 8A continuous collector current handling
• Designed for high reliability applications
• Plastic epoxy encapsulation for thermal stability

Single Bipolar Transistors Applications

• Switching regulator circuits
• High voltage power supply designs
• Industrial motor control systems

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer origin, as the provided documentation lists SANYO as the manufacturer while the brand query specifies onsemi. Confirm that the part number suffix matches the exact electrical specifications required for your design. Ensure compliance with RoHS directives if applicable to your manufacturing standards. Cross-reference the datasheet revision date to ensure access to the most current technical parameters and mechanical drawings.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage isolation and moderate current switching capabilities. The 800V rating makes it suitable for primary side switching in offline power supplies. Consider the 60W power dissipation limit and ensure adequate heatsinking or PCB copper area is allocated to maintain junction temperatures within safe operating limits during continuous operation.

Single Bipolar Transistors Part Context

This device belongs to the family of high-voltage NPN silicon power transistors. These components are typically used in flyback converters and other isolated power conversion topologies. The technology focuses on achieving fast switching speeds alongside high breakdown voltages, balancing efficiency with ruggedness in harsh electrical environments.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers were not identified in the available source material.