2SC4445

Single Bipolar Transistors Overview

The 2SC4445 is a Silicon NPN Triple Diffused Planar Transistor designed for high voltage and high speed switching applications. It features a collector-base voltage of 900 V and a collector-emitter voltage of 800 V. The device supports a continuous collector current of 3 A and a peak collector current of 6 A. Maximum power dissipation is 60 W at a case temperature of 25°C. The junction temperature range extends from -55°C to +150°C. Electrical characteristics include a minimum DC current gain (hFE) of 10 at IC=0.7A, with a typical transition frequency (fT) of 15 MHz.

Single Bipolar Transistors Feature Summary

• Triple diffused planar silicon construction ensures robust performance under high voltage conditions.
• Optimized for high speed switching capabilities suitable for demanding regulator environments.
• High voltage tolerance allows operation in circuits requiring significant collector-emitter breakdown margins.

Single Bipolar Transistors Applications

• Switching regulators
• General purpose high voltage switching

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer source when ordering, as multiple semiconductor companies produce this component number. Confirm the package type matches the required footprint, typically TO-3PML or FM100. Check datasheet revisions to ensure electrical parameters like hFE and switching times align with design requirements. Ensure proper thermal management solutions are selected based on the specified power dissipation ratings.

Single Bipolar Transistors Selection Notes

Select this transistor for circuits requiring high voltage blocking capability combined with moderate current handling. The triple diffused planar structure offers reliability advantages over standard planar types. Consider the thermal resistance characteristics when designing heatsinking, as power dissipation drops significantly without adequate cooling. Verify that the switching speeds meet the frequency requirements of the target application.

Single Bipolar Transistors Part Context

This component belongs to the family of high voltage NPN power transistors manufactured by Sanken Electric USA Inc. It utilizes triple diffused planar technology to achieve superior breakdown voltages and switching performance compared to conventional designs. The device is engineered specifically for robust operation in power conversion systems where voltage stress and switching efficiency are critical design constraints.

Single Bipolar Transistors Replacement Considerations

Direct substitutes may include other high voltage NPN transistors with similar voltage and current ratings, such as the 2SC4495. Verify pinout compatibility and thermal characteristics before substitution. Ensure replacement devices meet or exceed the original 900V VCBO and 800V VCEO specifications.

Single Bipolar Transistors FAQ

What is the maximum collector-base voltage rating?

The absolute maximum rating for collector-base voltage (VCBO) is 900 V.

What is the typical transition frequency (fT)?

The typical transition frequency is 15 MHz, measured under conditions of VCE=12V and IE=-0.3A.

What is the packaging style?

The device is available in the FM100 (TO-3PML) package configuration.