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2SC4453-3-TB-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is BIP NPN 0.2A 15V. Review the specifications below when checking this part for your BOM.
The 2SC4453-3-TB-E is an NPN epitaxial planar silicon transistor manufactured by onsemi. It is designed for high-speed switching applications, featuring a maximum collector current of 0.2A and a collector-emitter voltage of 15V. The device offers a minimum DC current gain (hFE) of 70 and a maximum power dissipation of 0.15W. It operates at a maximum junction temperature of 150°C and utilizes a small outline package with three pins.
Verify the manufacturer designation as onsemi or Sanyo Semicon Device, as historical data may reference prior ownership. Confirm the specific ordering number ENN2812A matches the required specifications. Ensure the package type corresponds to the small outline configuration. Check for any RoHS compliance documentation if required for your manufacturing process. Validate the pinout against the official datasheet to prevent installation errors.
Select this component when low collector saturation voltage and fast switching speeds are critical. Consider the 0.2A current limit and 15V voltage rating for circuit design constraints. Evaluate the thermal requirements given the 0.15W power dissipation limit. Compare the hFE gain of 70 against circuit amplification needs. Ensure the operating temperature range up to 150°C fits the environmental conditions.
This transistor belongs to the family of NPN epitaxial planar silicon devices intended for RF and general-purpose use. It shares functional similarities with the 2SC4452 series but is optimized for specific switching performance metrics. The component represents a standard discrete semiconductor solution for compact electronic designs requiring reliable high-frequency operation.
The 2SC4452-3 is a documented related part within the same product family. Verify electrical compatibility regarding current and voltage ratings before substitution. Ensure the package dimensions and pin configuration match the existing board layout. Cross-reference the gain-bandwidth product to maintain signal integrity in high-speed applications.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.