2SC4487S-AN

Single Bipolar Transistors Overview

The 2SC4487S-AN is an NPN bipolar junction transistor manufactured by onsemi. It features a maximum collector current of 3 A and a collector-emitter voltage rating of 50 V. The device utilizes the NMP surface-mount package with taping shipping configuration. Key electrical specifications include a DC current gain (hFE) ranging from 140 to 400 at 100 mA, a transition frequency (fT) of 150 MHz, and a collector dissipation power of 1 W. The component supports a maximum junction temperature of 150 °C.

Single Bipolar Transistors Feature Summary

• Adopts FBET and MBIT processes for enhanced performance
• Provides large current capacity and wide safe operating area
• Features low collector-to-emitter saturation voltage
• Delivers fast switching speed capabilities

Single Bipolar Transistors Applications

• High-current switching applications
• General-purpose amplifier circuits
• Power management systems requiring fast response

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The 'S' suffix indicates tape-and-reel packaging, while other variants may differ in shipping format. Confirm that the requested part number matches the exact electrical ranking and package type required for the design. Cross-reference the manufacturer's latest datasheet to ensure compliance with current product specifications and availability status.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high current handling up to 3 A with moderate voltage ratings of 50 V. The low saturation voltage makes it suitable for efficient power switching applications. Ensure the thermal design accommodates the 1 W power dissipation limit within the specified ambient temperature range. Verify that the required hFE rank aligns with the circuit's base drive requirements.

Single Bipolar Transistors Part Context

This component belongs to the 2SA1707/2SC4487 series of bipolar transistors produced by onsemi. The series includes complementary PNP (2SA1707) and NPN (2SC4487) devices designed for similar high-current switching roles. Both variants share identical mechanical dimensions and general performance characteristics, differing primarily in polarity and specific pinout configurations for circuit integration.

Single Bipolar Transistors Replacement Considerations

The 2SA1707 serves as the complementary PNP counterpart within the same series. Other generic NPN transistors may substitute if they meet or exceed the 50 V collector-emitter voltage, 3 A current, and 1 W power dissipation limits. Verify pin compatibility and saturation voltage characteristics when selecting alternative components.