2SC4488S-AN

Single Bipolar Transistors Overview

The onsemi 2SC4488S-AN is an NPN silicon bipolar junction transistor housed in the NMP (SC-71) surface-mount package. It features a maximum collector-to-emitter voltage of 100 V and a continuous collector current rating of 1 A, with a peak pulse current capability of 2 A. The device supports a maximum power dissipation of 1 W at 25°C ambient temperature and operates within a junction temperature range up to 150°C. Key electrical characteristics include a DC current gain (hFE) ranging from 140 to 400 depending on the rank, a gain-bandwidth product of 120 MHz, and low saturation voltages of 0.4 V (VCE(sat)) and 1.2 V (VBE(sat)). Switching performance includes a turn-on time of 80 ns, storage time of 850 ns, and fall time of 50 ns.

Single Bipolar Transistors Feature Summary

• Adopts FBET and MBIT processes for high breakdown voltage and large current capacity
• Optimized for fast switching speed applications
• Low collector-to-emitter saturation voltage for efficient conduction

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Amplifier stages requiring high gain-bandwidth product
• Driver circuits for loads operating within 100 V limits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging configuration. The 'S' suffix indicates bag packing, while the 'T' suffix denotes tape and reel shipping. Confirm that the required hFE rank aligns with the design specifications, as gain varies between S and T ranks. Ensure the procurement channel sources directly from authorized distributors to guarantee component authenticity and traceability.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor with 100 V collector-to-emitter voltage and 1 A continuous current handling is required. The NMP package is suitable for space-constrained surface-mount designs. Consider the hFE rank requirements early in the design phase, as the S rank offers 140-280 gain while the T rank provides 200-400 gain. Verify thermal management capabilities for the 1 W dissipation limit under expected operating conditions.

Single Bipolar Transistors Part Context

The 2SC4488S-AN belongs to the 2SA1708/2SC4488 family of bipolar transistors manufactured by onsemi. This series pairs complementary PNP (2SA1708) and NPN (2SC4488) devices designed for general-purpose use. Both variants share identical electrical ratings and utilize the same NMP package footprint, facilitating balanced push-pull circuit configurations.

Single Bipolar Transistors Replacement Considerations

Direct replacements must match the NPN configuration, 100 V VCEO, 1 A IC rating, and NMP package. Verify pinout compatibility (Emitter, Collector, Base) before substitution. Check if alternative components meet the 120 MHz fT requirement and similar saturation voltage characteristics for equivalent performance.

Single Bipolar Transistors FAQ

What is the difference between the 2SC4488S-AN and 2SC4488T-AN?

The primary difference lies in the shipping packaging. The 'S' suffix indicates bag packing, while the 'T' suffix indicates tape and reel packaging. Both contain the same semiconductor device.

What are the DC current gain (hFE) ranks available for this device?

The device is classified into two hFE ranks based on testing at IC=100mA and VCE=5V. Rank S covers a gain range of 140 to 280, and Rank T covers a gain range of 200 to 400.

What is the maximum allowable junction temperature for the 2SC4488S-AN?

The maximum junction temperature (Tj) for the 2SC4488S-AN is 150°C.