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The CEL 2SC4536-T1-AZ is an NPN epitaxial silicon RF transistor designed for high-frequency amplifier applications. It operates in the ultra-high frequency band with a maximum collector current of 0.25 A and a collector-emitter voltage rating of 15 V. The device features a minimum DC current gain (hFE) of 40 and can dissipate up to 2 W of power. It is housed in a surface-mount small outline package with three flat terminals, suitable for automated assembly processes.
Verify the manufacturer designation carefully, as this component type was originally developed by NEC and later acquired by Renesas Electronics. Confirm that the specific suffix matches your supply chain requirements. Check for end-of-life notifications or product change notices from authorized distributors to ensure long-term availability and consistency.
Select this component when a low-noise NPN RF transistor is required for ultra-high frequency applications. Ensure the circuit design accommodates the 15 V collector-emitter voltage limit and 0.25 A maximum current. Verify that the small outline package footprint aligns with your PCB layout constraints and thermal management strategy for 2 W power dissipation.
This part belongs to the family of RF bipolar transistors historically manufactured by NEC Semiconductor, which became part of Renesas Electronics following corporate restructuring. The 2SC4536 series is widely recognized in the industry for its reliability in RF amplifier designs. Distribution through CEL indicates third-party sourcing of legacy or surplus inventory rather than direct OEM production.
Direct substitutes include the Renesas 2SC4536-AZ and original NEC 2SC4536 variants. Verify pinout compatibility and electrical parameter tolerances before substitution. Cross-reference datasheets to ensure equivalent noise figures and frequency response characteristics match the original design specifications.