2SC4536-T1-AZ

2SC4536-T1-AZ

$1.85
  • Description:RF TRANS NPN 15V 5.5GHZ SOT-89
  • Series:-

SKU:2d2993aaf88c Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 15V 5.5GHZ SOT-89
  • Series:-
  • Mfr:CEL
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):15V
  • Frequency - Transition:5.5GHz
  • Noise Figure (dB Typ @ f):2dB @ 1GHz
  • Gain:7dB
  • Power - Max:2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 50mA, 10V
  • Current - Collector (Ic) (Max):250mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:SOT-89
  • Grade:-
  • Qualification:-

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2SC4536-T1-AZ

Overview

The CEL 2SC4536-T1-AZ is an NPN epitaxial silicon RF transistor designed for high-frequency amplifier applications. It operates in the ultra-high frequency band with a maximum collector current of 0.25 A and a collector-emitter voltage rating of 15 V. The device features a minimum DC current gain (hFE) of 40 and can dissipate up to 2 W of power. It is housed in a surface-mount small outline package with three flat terminals, suitable for automated assembly processes.

Feature Summary

  • NPN epitaxial silicon construction optimized for RF signal amplification
  • Low noise performance characteristics for sensitive receiver stages
  • Surface-mount small outline package design for compact circuit integration

Applications

  • RF amplifier circuits in communication systems
  • Ultra-high frequency signal processing modules
  • Low noise amplifier stages in receiver front-ends

Procurement Notes

Verify the manufacturer designation carefully, as this component type was originally developed by NEC and later acquired by Renesas Electronics. Confirm that the specific suffix matches your supply chain requirements. Check for end-of-life notifications or product change notices from authorized distributors to ensure long-term availability and consistency.

Selection Notes

Select this component when a low-noise NPN RF transistor is required for ultra-high frequency applications. Ensure the circuit design accommodates the 15 V collector-emitter voltage limit and 0.25 A maximum current. Verify that the small outline package footprint aligns with your PCB layout constraints and thermal management strategy for 2 W power dissipation.

Part Context

This part belongs to the family of RF bipolar transistors historically manufactured by NEC Semiconductor, which became part of Renesas Electronics following corporate restructuring. The 2SC4536 series is widely recognized in the industry for its reliability in RF amplifier designs. Distribution through CEL indicates third-party sourcing of legacy or surplus inventory rather than direct OEM production.

Replacement Considerations

Direct substitutes include the Renesas 2SC4536-AZ and original NEC 2SC4536 variants. Verify pinout compatibility and electrical parameter tolerances before substitution. Cross-reference datasheets to ensure equivalent noise figures and frequency response characteristics match the original design specifications.

2SC4536-T1-AZ2SC4536-T1-AZ
$1.85
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