2SC4604,T6F(M

Single Bipolar Transistors Overview

The Toshiba 2SC4604 is a silicon NPN epitaxial planar transistor utilizing the PCT process, designed for power amplifier and switching applications. It features a low collector-emitter saturation voltage of 0.5 V maximum at 1.5 A and a typical storage time of 0.5 μs. The device supports a collector current of 3 A and a collector-emitter breakdown voltage of 50 V. Key electrical characteristics include a DC current gain ranging from 120 to 400 at 100 mA and a transition frequency of 100 MHz. It operates within a junction temperature range up to 150 °C and is housed in a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient power handling
• High-speed switching capability with short storage times
• Complementary pairing available with the 2SA1761 PNP transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• General-purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify component authenticity by checking the marking code 'C4604' and lot number on the TO-92MOD package. Confirm lead-free status via the presence of an indicator line on the component body. Ensure compliance with RoHS requirements by consulting the specific sales representative for the latest environmental data sheets before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high DC current gain and fast switching speeds. Consider the complementary 2SA1761 for push-pull configurations. Evaluate thermal management strategies as the device dissipates up to 900 mW. Verify that operating conditions remain within the specified absolute maximum ratings to maintain long-term reliability and prevent performance degradation under heavy loads.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Toshiba's general-purpose discrete semiconductor lineup. It is engineered using the PCT (Planar Chip Transistor) process to ensure stable performance. The device serves as a standard solution for medium-power amplification tasks. Its specifications align with common industry requirements for consumer electronics and industrial control systems where reliable switching is essential.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1761 as the complementary PNP counterpart. No other direct substitute part numbers are documented in the provided source material. Designers should verify pinout compatibility and thermal characteristics when considering alternative manufacturers.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is 50 V when the base current is zero.

How does the DC current gain vary with collector current?

The DC current gain (hFE) ranges from 120 to 400 at a collector current of 100 mA, and drops to a minimum of 40 at a collector current of 2 A.

What is the typical transition frequency of the device?

The transition frequency (fT) is typically 100 MHz when measured at a collector-emitter voltage of 2 V and a collector current of 100 mA.