2SC4615E-E

Single Bipolar Transistors Overview

The onsemi 2SC4615E-E is an NPN epitaxial planar silicon transistor designed for high-voltage driver applications. It features a maximum collector current of 1 A and a collector-emitter breakdown voltage of at least 400 V. The device utilizes a triple diffused planar process to ensure robust performance under high-stress conditions. Key electrical characteristics include a maximum collector-base voltage of 450 V and an emitter-base voltage of 5 V. The component supports a maximum power dissipation of 1 W and operates within a junction temperature range up to +150 °C, making it suitable for demanding switching and amplification tasks.

Single Bipolar Transistors Feature Summary

• High voltage capability with a minimum collector-emitter breakdown voltage of 400 V
• Large current capacity supporting up to 1 A continuous collector current
• Triple diffused planar construction for enhanced reliability and stability

Single Bipolar Transistors Applications

• High-voltage driver circuits
• Switching applications requiring high breakdown voltage
• General-purpose amplification in industrial equipment

Single Bipolar Transistors Procurement Notes

Verify the specific suffix E-E against official datasheets to confirm pinout and thermal specifications. Ensure compatibility with existing circuit designs regarding voltage ratings and power dissipation limits. Confirm availability through authorized distributors as lead times may vary. Check for RoHS compliance status if required by project regulations.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits that require high voltage handling capabilities combined with moderate current drive. Consider the 1 W power dissipation limit and ensure adequate heatsinking or thermal management is implemented. Compare against alternative NPN transistors with similar Vceo ratings to optimize cost and performance for the specific application requirements.

Single Bipolar Transistors Part Context

This part belongs to the family of high-voltage bipolar junction transistors manufactured by onsemi. It is often paired with complementary PNP devices like the 2SA1772 for push-pull configurations. The triple diffused technology distinguishes it from standard planar transistors, offering improved ruggedness for driver stages in power supplies and motor control systems.

Single Bipolar Transistors Replacement Considerations

The 2SA1772 is the complementary PNP counterpart often used in conjunction with this NPN device. Verify pinout compatibility before substituting with other high-voltage NPN transistors such as those from the 2SC46xx series.