Single Bipolar Transistors 2SC4617E3HZGTLQ product image

2SC4617E3HZGTLQ

$0.25
  • Description:TRANS NPN 50V 0.15A EMT3
  • Series:-

SKU:dc16c1d6d7c8 Category: Brand:

  
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2SC4617E3HZGTLQ is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 50V 0.15A EMT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC4617E3HZGTLQ

  • Description:TRANS NPN 50V 0.15A EMT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):150 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 6V
  • Power - Max:150 mW
  • Frequency - Transition:180MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:EMT3
  • Grade:Automotive
  • Qualification:AEC-Q101

Single Bipolar Transistors datasheet and documents for 2SC4617E3HZGTLQ

2SC4617E3HZGTLQ

Single Bipolar Transistors Overview

The 2SC4617E3HZGTLQ is an NPN silicon small signal transistor manufactured by ROHM Semiconductor. It operates with a collector-emitter voltage of 50V and a continuous collector current of 150mA, supporting a peak pulse current of 200mA. The device features a transition frequency of 180MHz and a low output capacitance of 2.0pF typical. Packaged in the SOT-416 (EMT3) surface-mount format, it complies with AEC-Q101 automotive standards and RoHS directives.

Single Bipolar Transistors Feature Summary

  • AEC-Q101 qualified for automotive reliability
  • Low output capacitance of 2.0pF typical
  • Designed to complement the 2SA1774E3 HZG PNP transistor

Single Bipolar Transistors Applications

  • General purpose small signal amplifier circuits
  • Automotive electronic systems requiring AEC-Q101 compliance

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the official ROHM datasheet to confirm packaging details such as tape width and reel size. Ensure that the component selection aligns with the required thermal derating conditions and storage temperature limits defined in the manufacturer's specifications.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring a compact NPN transistor with low parasitic capacitance. Verify that the circuit design accommodates the specified DC current gain range and power dissipation limits under the intended operating ambient temperatures.

Single Bipolar Transistors Part Context

This part belongs to the 2SC4617E3 series of general-purpose amplification transistors. It is specifically engineered to serve as the complementary NPN counterpart to the 2SA1774E3 HZG PNP transistor, facilitating matched performance in push-pull or differential amplifier configurations.

Single Bipolar Transistors Replacement Considerations

The 2SA1774E3 HZG is documented as the complementary device. No other direct substitute part numbers are confirmed in the provided documentation.

Single Bipolar Transistors FAQ

What is the maximum collector-base breakdown voltage?

The maximum collector-base breakdown voltage (BV_CBO) is 60V.

Is this transistor suitable for high-frequency applications?

Yes, it has a transition frequency (f_T) of 180MHz and low output capacitance, making it suitable for small signal amplification.

What is the recommended package type?

The recommended package is SOT-416, also known as EMT3.

2SC4617E3HZGTLQ2SC4617E3HZGTLQ
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