Single Bipolar Transistors 2SC4672 product image

2SC4672

$0.26
  • Description:TRANS NPN 50V 2A SOT-89
  • Series:-

SKU:570e460240cd Category: Brand:

  
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2SC4672 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists EVVO. Its product description is TRANS NPN 50V 2A SOT-89. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC4672

  • Description:TRANS NPN 50V 2A SOT-89
  • Series:-
  • Mfr:EVVO
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:350mV @ 50mA, 1A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:82 @ 500mA, 2V
  • Power - Max:500 mW
  • Frequency - Transition:210MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:SOT-89
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC4672

2SC4672

Single Bipolar Transistors Overview

The EVVO 2SC4672 is an NPN silicon epitaxial planar transistor housed in a SOT-89 surface-mount package. It features a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 2A. The device offers a transition frequency of 210MHz and a maximum power dissipation of 500mW at 25°C ambient temperature. Key electrical characteristics include a low collector-emitter saturation voltage of 350mV at 1A collector current and a DC current gain ranging from 82 to 390 depending on the specific hFE classification type.

Single Bipolar Transistors Feature Summary

  • Low saturation voltage for efficient switching performance
  • Excellent DC current gain characteristics across multiple classifications
  • Complementary pairing with the 2SA1797 PNP transistor

Single Bipolar Transistors Applications

  • UHF low-noise amplifier circuits
  • Wide-band amplifier applications
  • General-purpose switching and amplification tasks

Single Bipolar Transistors Procurement Notes

Verify the specific hFE bin (P, Q, or R) required for your circuit design, as gain ranges vary significantly between types. Confirm the SOT-89 package orientation matches your PCB footprint, noting that pin 2 is the collector. Ensure thermal management supports the 500mW dissipation limit under operating conditions. Check RoHS compliance status if environmental regulations apply to your assembly process.

Single Bipolar Transistors Selection Notes

Select the appropriate hFE variant based on the required current gain stability; Type P offers 82-180, Type Q provides 120-270, and Type R delivers 180-390. Consider the 250°C/W thermal resistance when designing heat dissipation strategies. Verify that the 50V collector-emitter voltage exceeds the maximum circuit operating voltage. Ensure the 2A current capacity meets peak load requirements without exceeding junction temperature limits.

Single Bipolar Transistors Part Context

This component belongs to the EVVO discrete semiconductor product line, specifically within the bipolar junction transistor category. It is designed as a complementary pair to the 2SA1797 PNP transistor, facilitating push-pull output stage configurations. The SOT-89 package provides a compact solution for high-current applications while maintaining adequate thermal performance for surface-mount assembly processes.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers: 2SC4672T100P (Rohm Semiconductor).

Single Bipolar Transistors FAQ

What are the pin assignments for the SOT-89 package?

Pin 1 is the Base, Pin 2 is the Collector, and Pin 3 is the Emitter.

How does the hFE classification affect the part marking?

Type P is marked DKP, Type Q is marked DKQ, and Type R is marked DKR.

What is the typical noise figure at UHF frequencies?

The datasheet specifies a typical noise figure of 1.5dB at 0.9GHz for UHF low-noise amplifier applications.

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