2SC4672T100Q

Single Bipolar Transistors Overview

The 2SC4672T100Q is an NPN low-frequency transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage of 50V and a continuous collector current of 3A. The device offers a typical saturation voltage of 0.1V at IC/IB = 1A/50mA and a transition frequency of 210MHz. DC current gain ranges from 82 to 270 depending on the hFE code. Power dissipation is rated at 0.5W, with a maximum junction temperature of 150°C.

Single Bipolar Transistors Feature Summary

• Low saturation voltage for efficient switching performance
• Excellent DC current gain characteristics across operating temperatures
• Designed to complement the 2SA1797 PNP counterpart

Single Bipolar Transistors Applications

• Low frequency amplification circuits
• General purpose switching applications
• Audio visual equipment
• Office automation equipment

Single Bipolar Transistors Procurement Notes

Verify the specific hFE bin (P or Q) required for your design, as this affects the DC current gain range. Confirm package type MPT3 availability. Check for end-of-life status or alternative recommendations from the manufacturer before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select based on required hFE gain band; Code P provides 82-180 gain while Code Q provides 120-270 gain. Ensure thermal management supports 0.5W dissipation on appropriate PCB layouts. Verify compatibility with complementary 2SA1797 if push-pull configurations are utilized.

Single Bipolar Transistors Part Context

This component belongs to ROHM's standard low-frequency transistor lineup. It is designed for general electronic equipment including consumer electronics and office automation. The device utilizes silicon technology and is packaged in surface-mount format suitable for automated assembly processes.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly states that the 2SC4672 complements the 2SA1797. For direct replacement, verify pinout compatibility and electrical parameter overlap with other NPN transistors offering similar 50V/3A ratings and MPT3 packaging.

Single Bipolar Transistors FAQ

What is the difference between hFE codes P and Q?

Code P specifies a DC current gain range of 82 to 180, while Code Q specifies a higher gain range of 120 to 270.

Is this component suitable for automotive applications?

No. The datasheet specifies it is designed for ordinary electronic equipment such as audio visual and office automation devices, not for high-reliability automotive use.

What is the typical collector-emitter saturation voltage?

The typical VCE(sat) is 0.1V when measured at IC/IB = 1A/50mA.