2SC4673D-TD-E

Single Bipolar Transistors Overview

The onsemi 2SC4673D-TD-E is an NPN silicon epitaxial planar transistor designed for ultra-high frequency applications. It features a PCP-3 surface-mount package and operates with a maximum collector-emitter voltage of 12 V and a continuous collector current of 0.1 A. The device exhibits a typical cutoff frequency (fT) of 4.5 GHz, enabling high-speed signal processing. It supports a maximum junction temperature of 150 °C and includes a collector-connected case for thermal management.

Single Bipolar Transistors Feature Summary

• Optimized for low-noise amplification in the UHF band
• Provides high power gain for wide-band amplifier circuits
• Features a high cutoff frequency for ultra-high frequency operation

Single Bipolar Transistors Applications

• UHF Low-Noise Amplifier stages
• Wide-Band Amplifier implementations
• High-frequency signal processing circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'TD-E' against the manufacturer's official datasheet to confirm tape-and-reel packaging and lead-free compliance. Ensure the component matches the original Sanyo semiconductor specifications, as ownership transitions may affect documentation availability. Confirm RoHS status and environmental certifications prior to integration into production designs.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring low noise figures and high power gain at frequencies around 0.9 GHz. The PCP-3 package facilitates surface-mount assembly. Evaluate thermal dissipation requirements carefully, as the device relies on the collector pad for heat transfer. Compare performance metrics against alternative UHF transistors to ensure compatibility with system impedance and biasing constraints.

Single Bipolar Transistors Part Context

This component belongs to the family of ultra-high frequency bipolar junction transistors originally developed by Sanyo Semiconductor. These devices are engineered specifically for RF front-end applications where signal integrity and minimal noise addition are critical. The technology utilizes epitaxial planar silicon processes to achieve high cutoff frequencies suitable for modern communication systems.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for equivalents such as the 2SC4673 without suffixes or other UHF low-noise transistors from different manufacturers. Verify pinout compatibility and electrical parameter tolerances before substituting.