2SC4696-AN

Single Bipolar Transistors Overview

The onsemi 2SC4696-AN is an NPN epitaxial planar silicon transistor designed for low-frequency general-purpose amplifier and muting applications. It utilizes the FBET process to achieve high DC current gain and a high emitter-to-base voltage rating of at least 25V. The device features a small ON resistance of approximately 1 ohm when driven with a base current of 5mA. It is housed in an ultrasmall package suitable for compact electronic designs, supporting operation up to a maximum junction temperature of 150°C.

Single Bipolar Transistors Feature Summary

• Adopts FBET process technology for enhanced performance characteristics
• Provides high DC current gain for efficient signal amplification
• Features high emitter-to-base voltage tolerance exceeding 25V
• Offers low ON resistance for effective switching control

Single Bipolar Transistors Applications

• Low-frequency general-purpose amplifier circuits
• Audio muting and switching applications
• Compact consumer electronic device designs

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet revision and electrical parameter tolerances against the official onsemi documentation before integration. Confirm that the required operating conditions align with the absolute maximum ratings provided in the manufacturer's specifications. Ensure compatibility with the intended PCB layout constraints due to the ultrasmall package dimensions.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high gain and robust emitter-to-base protection in space-constrained environments. Consider the thermal management requirements associated with the specified power dissipation limits. Evaluate the trade-off between the small form factor and the available drive current capabilities for the target application load.

Single Bipolar Transistors Part Context

This part belongs to the family of NPN bipolar junction transistors manufactured by onsemi using epitaxial planar silicon technology. These devices are engineered for discrete semiconductor applications where reliable amplification and switching are required. The product line emphasizes miniaturization and performance efficiency for modern electronic systems.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for verified equivalents. Cross-reference parameters such as collector-emitter voltage, current gain, and package type to ensure functional compatibility without modifying the existing circuit design.