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The CEL 2SC4703-T1-AZ is an NPN epitaxial silicon RF transistor designed for low distortion and low noise amplifier applications. It operates with a low supply voltage of 5 V, achieving typical intermodulation distortion levels of IM2 = 55 dBc and IM3 = 76 dBc at IC = 50 mA. The device features a gain bandwidth product (fT) of 6.0 GHz and a maximum total power dissipation of 1.8 W when mounted on a specified ceramic substrate. It utilizes a 3-pin Power Mini Mold (SOT-89) package.
Verify the specific ordering suffix to ensure correct packaging configuration. The -T1 variant indicates a reel quantity of 1 kpcs with the collector face oriented toward the perforation side of the tape. Confirm that the -AZ suffix aligns with required environmental or material specifications before finalizing procurement orders.
Select this component for designs requiring high linearity at low bias currents. Ensure the thermal management strategy accommodates the 1.8 W power dissipation limit using a double-sided copper-clad ceramic substrate. Verify that the operating frequency remains within the effective range of the 6.0 GHz gain bandwidth product for optimal performance.
This part corresponds to the Renesas NE46234 series. The 2SC4703 designation serves as an alternative manufacturer marking for the same underlying silicon die and electrical characteristics. Both identifiers refer to the identical NPN RF transistor structure intended for similar high-frequency amplifier roles.
Direct substitutes include the Renesas NE46234-AZ and NE46234-T1. These parts share identical pinouts and electrical specifications. Verify package compatibility and thermal resistance values when transitioning between suppliers to maintain circuit stability.