2SC4713KT146R

$0.48

Description：RF TRANS NPN 6V 800MHZ SMT3
Series：-

SKU:efd99dbf369d Category: Bipolar RF Transistors Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 6V 800MHZ SMT3
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：6V
Frequency - Transition：800MHz
Noise Figure (dB Typ @ f)：-
Gain：-
Power - Max：200mW
DC Current Gain (hFE) (Min) @ Ic, Vce：180 @ 5mA, 5V
Current - Collector (Ic) (Max)：50mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SMT3
Grade：-
Qualification：-

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2SC4713KT146R

Overview

The 2SC4713KT146R is an NPN high-frequency amplifier transistor manufactured by ROHM Semiconductor. It operates with a collector-emitter voltage of 6V and a maximum collector current of 50mA, dissipating up to 200mW of power. The device features a transition frequency (fT) ranging from 300MHz to 800MHz at VCE=5V and IE=-10mA. Electrical characteristics include a DC current gain (hFE) between 120 and 560, classified into ranks Q, R, and S. Key parameters include a collector-base breakdown voltage of 12V, emitter-base breakdown voltage of 3V, and output capacitance of approximately 1.0pF to 1.7pF.

Feature Summary

Designed for high-frequency amplification applications
Features very low output-on resistance for efficient switching
Low output capacitance supports RF signal integrity

Applications

High frequency amplifier circuits
RF switching applications

Procurement Notes

Verify the specific hFE rank (Q, R, or S) required for your design against the datasheet classification table. Confirm that the SMT3 package dimensions align with your PCB footprint. Ensure ESD protection measures are implemented during handling due to the product's sensitivity to electrostatic discharge.

Selection Notes

Select this component when a low-voltage (6V), small-signal NPN transistor is needed for RF frequencies up to 800MHz. Consider the hFE rank requirements for gain consistency. Verify thermal management capabilities as the power dissipation is limited to 200mW on a reference land.

Part Context

This part belongs to the 2SC4713K series of surface-mount bipolar junction transistors. It utilizes the SOT-346 (SMT3) package, which corresponds to the JEITA SC-59 standard. The KT146R suffix indicates the taping code and reel specifications for automated assembly.