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The 2SC4725TLP is a high-frequency NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It operates with a collector-emitter voltage of 20V and a maximum collector current of 50mA, housed in an EMT3 (SOT-416) surface-mount package. The device features a typical transition frequency of 1.5GHz and a low collector-base time constant of 6ps. Electrical characteristics include a DC current gain ranging from 82 to 180 at IC=1mA, output capacitance of 0.9pF, and a noise figure of 4.5dB at 200MHz.
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Ensure design margins account for absolute maximum ratings under varying thermal conditions.
Select this component for applications requiring high-speed switching or amplification in the UHF range. Evaluate the trade-off between the 20V breakdown voltage and the 50mA current limit against circuit requirements. Consider the SOT-416 footprint constraints during PCB layout planning.
This part belongs to a family of high-frequency transistors including the 2SC5661, 2SC4082, and 2SC3837K. While sharing similar electrical performance profiles, each variant utilizes a distinct package type such as VMT3, UMT3, or SMT3. The 2SC4725 specifically utilizes the EMT3 package configuration.
Direct substitutes within the same package are not explicitly listed in the provided datasheet. Cross-reference the 2SC5661, 2SC4082, or 2SC3837K only if package compatibility adjustments are permissible in the target design.
The typical transition frequency (fT) is 1.5GHz.
The maximum collector power dissipation is 0.15W at an ambient temperature of 25°C.
The minimum hFE is 82 when measured at IC = 1mA and VCE = 10V.