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The 2SC4726TLP is an NPN high-frequency amplifier transistor manufactured by ROHM Semiconductor. It operates in a surface-mount SOT-416 (EMT3) package with dimensions of 1.6x1.6 mm. The device supports a maximum collector current of 50 mA and a collector-emitter voltage of 11 V. Key electrical parameters include a transition frequency (fT) of 3.2 GHz, a DC current gain (hFE) range of 56 to 180, and a power dissipation rating of 150 mW at 25°C ambient temperature.
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm RoHS compliance status prior to integration. Ensure ESD protection measures are implemented during handling due to electrostatic sensitivity. Validate storage conditions to maintain solderability before assembly.
Select this component for applications requiring small form factor RF amplification. Evaluate thermal derating requirements if operating above 25°C ambient temperature. Consider the 11V collector-emitter voltage limit when designing biasing networks. Verify that the 50mA current rating meets the circuit load requirements.
This part belongs to ROHM's discrete bipolar transistor portfolio designed for surface-mount technology. It utilizes the EMT3 package code standardized under JEITA SC-75A specifications. The product line targets compact electronic equipment requiring efficient high-frequency signal handling capabilities.
Consult official substitution lists for verified equivalents. Do not assume pin-compatible alternatives without verifying electrical characteristics. Check datasheet compatibility for transition frequency and noise figure requirements.