2SC4738-Y,LF

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC4738-Y,LF is a silicon NPN bipolar junction transistor (BJT) designed for general-purpose amplification applications. It operates with a maximum collector current of 150 mA and a collector-emitter voltage rating of 50 V. The device features a DC current gain (hFE) ranging from 120 to 700, ensuring high amplification capability across various operating conditions. With a transition frequency of 80 MHz and a power dissipation limit of 100 mW, it is suitable for low-power signal processing tasks. The component is housed in an SOT-416-3 surface-mount package, facilitating compact circuit board layouts.

Single Bipolar Transistors Feature Summary

• High DC current gain range for effective signal amplification
• Low saturation voltage for efficient switching performance
• Complementary pairing available with the 2SA1832FV-Y PNP transistor

Single Bipolar Transistors Applications

• Audio frequency general-purpose amplifier circuits
• Low-power signal processing stages
• General-purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'Y' against the official Toshiba datasheet to confirm pinout configuration and binning specifications. Ensure the 'LF' designation aligns with RoHS compliance requirements for your manufacturing process. Cross-reference the SOT-416-3 package dimensions with your PCB footprint library to prevent assembly errors during production.

Single Bipolar Transistors Selection Notes

Select this component when a small-signal NPN transistor with moderate voltage ratings and high gain is required. The 50 V breakdown voltage suits low-voltage logic interfaces. Consider the complementary 2SA1832FV-Y if push-pull output stages are needed. Evaluate thermal management needs as the 100 mW dissipation limit restricts usage in high-current scenarios without adequate heat sinking.

Single Bipolar Transistors Part Context

This part belongs to the 2SC4738 series of silicon NPN transistors manufactured by Toshiba Semiconductor. The series is characterized by its suitability for audio and general-purpose amplification. The device utilizes standard planar silicon technology, offering reliability for consumer electronics and industrial control systems requiring compact, surface-mount active components.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute: 2SC4738-BL(TE85L,F). Verify electrical parameter compatibility before substitution.