Single Bipolar Transistors 2SC4793,HFEF(J product image

2SC4793,HFEF(J

  • Description:TRANS NPN 230V 1A TO-220NIS
  • Series:-

SKU:e7e8d9e3aa7c Category: Brand:

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2SC4793,HFEF(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 230V 1A TO-220NIS. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC4793,HFEF(J

  • Description:TRANS NPN 230V 1A TO-220NIS
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):230 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 5V
  • Power - Max:2 W
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220NIS
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC4793,HFEF(J

2SC4793,HFEF(J

Single Bipolar Transistors Overview

The Toshiba 2SC4793 is an NPN silicon epitaxial planar transistor designed for power amplifier and driver stage applications. It features a high transition frequency of 100 MHz typical, with a collector-emitter voltage rating of 230 V and a continuous collector current capacity of 1 A. The device offers a DC current gain ranging from 100 to 320 at 100 mA. Packaged in the TO-220F (2-10R1A) format, it supports a maximum collector power dissipation of 20 W at 25°C case temperature and operates within a junction temperature range up to 150°C.

Single Bipolar Transistors Feature Summary

  • High transition frequency optimized for efficient signal amplification
  • Complementary pairing capability with the 2SA1837 PNP transistor
  • Robust thermal management through isolated flange mounting

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • Driver stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status directly with the manufacturer or authorized distributor, as lead-free designations may vary by production lot. Confirm that the specific ordering suffix matches the required package finish and packaging type. Ensure all electrical parameters align with the absolute maximum ratings provided in the official datasheet before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high-voltage handling capabilities combined with moderate power dissipation. The 230 V breakdown voltage makes it suitable for general-purpose power switching and linear amplification tasks. Consider the complementary 2SA1837 for push-pull configurations to ensure balanced performance characteristics across the operating range.

Single Bipolar Transistors Part Context

This component belongs to the broader category of bipolar junction transistors manufactured by Toshiba Semiconductor and Storage. It serves as a discrete semiconductor device intended for integration into various electronic systems. The product line focuses on providing reliable amplification solutions for consumer electronics, office equipment, and industrial robotics applications.

Single Bipolar Transistors Replacement Considerations

The 2SA1837 is officially documented as the complementary PNP counterpart. Verify pinout compatibility and thermal resistance specifications when substituting with other TO-220F packaged transistors.

Single Bipolar Transistors FAQ

What is the typical transition frequency of the 2SC4793?

The typical transition frequency (fT) is 100 MHz.

Is the 2SC4793 compatible with the 2SA1837?

Yes, the datasheet explicitly states that the 2SC4793 is complementary to the 2SA1837.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at 230 V.

2SC4793,HFEF(J2SC4793,HFEF(J

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