Single Bipolar Transistors 2SC4793,YHF(J product image

2SC4793,YHF(J

  • Description:TRANS NPN 230V 1A TO-220NIS
  • Series:-

SKU:4796a83990c7 Category: Brand:

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2SC4793,YHF(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 230V 1A TO-220NIS. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC4793,YHF(J

  • Description:TRANS NPN 230V 1A TO-220NIS
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):230 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 5V
  • Power - Max:2 W
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220NIS
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC4793,YHF(J

2SC4793,YHF(J

Single Bipolar Transistors Overview

The Toshiba 2SC4793 is a silicon NPN epitaxial planar power transistor designed for high-frequency applications. It features a maximum collector-emitter voltage of 230 V and a continuous collector current rating of 1 A. The device achieves a typical transition frequency (fT) of 100 MHz at 100 mA, supporting driver stage and power amplifier functions. Thermal management allows for 2 W dissipation in free air and up to 20 W with a heatsink at 25°C case temperature. The component utilizes a TO-220F package.

Single Bipolar Transistors Feature Summary

  • High transition frequency capability suitable for RF amplification
  • Complementary pairing available with the 2SA1837 PNP transistor
  • Robust thermal performance with elevated power dissipation under heatsink mounting

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • Driver stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the official Toshiba datasheet to confirm lead plating specifications and packaging type. Confirm RoHS compliance status directly with the manufacturer or authorized distributor prior to procurement. Ensure the selected variant matches the required thermal and electrical ratings for the intended design environment.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high-voltage handling combined with significant bandwidth. The 230 V breakdown voltage accommodates high supply rails, while the 100 MHz transition frequency supports audio and intermediate frequency stages. Consider the complementary 2SA1837 for push-pull configurations requiring matched characteristics.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba discrete semiconductor family of NPN power transistors. It is engineered for general electronics applications including consumer equipment and industrial control systems. The device adheres to standard JEDEC mechanical outlines for through-hole mounting.

Single Bipolar Transistors Replacement Considerations

The 2SA1837 serves as the designated complementary PNP counterpart for balanced circuit designs. Verify pinout compatibility and thermal resistance values when substituting equivalent parts from other manufacturers.

Single Bipolar Transistors FAQ

What is the typical transition frequency of the 2SC4793?

The typical transition frequency (fT) is 100 MHz when measured at a collector current of 100 mA and a collector-emitter voltage of 10 V.

Is the 2SC4793 compatible with the 2SA1837?

Yes, the 2SC4793 is explicitly documented as complementary to the 2SA1837 PNP transistor.

What is the maximum collector-base voltage rating?

The absolute maximum collector-base voltage (VCBO) rating is 230 V.

2SC4793,YHF(J2SC4793,YHF(J

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