2SC4881,LS1SUMIF(M

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC4881 is a silicon NPN epitaxial planar transistor designed for high-current switching applications. It features a low collector-emitter saturation voltage of 0.4 V maximum at 2.5 A and a typical storage time of 0.8 μs. The device supports a continuous collector current of 5 A and a pulse current of 8 A, with a collector-base breakdown voltage of 60 V and a collector-emitter breakdown voltage of 50 V. Operating within a junction temperature range up to 150°C, it utilizes a 2-10R1A package.

Single Bipolar Transistors Feature Summary

• Optimized for high-current switching applications with low saturation voltage characteristics
• Features high-speed switching performance with short storage times
• Utilizes silicon NPN epitaxial planar construction for robust operation

Single Bipolar Transistors Applications

• General electronics equipment
• Industrial robotics control circuits
• Domestic appliance power management

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and lead-free finish compliance. Confirm that the intended application falls within general electronics usage guidelines, as the component is not rated for safety-critical or medical systems without explicit manufacturer approval. Cross-reference absolute maximum ratings with system design requirements to prevent reliability degradation under heavy loads.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high collector currents up to 5 A with minimal voltage drop across the switch. Ensure the base drive current can supply the necessary 125 mA for full saturation at 2.5 A load conditions. Consider thermal management strategies, as power dissipation ratings are dependent on case temperature, requiring appropriate heat sinking for sustained high-current operations.

Single Bipolar Transistors Part Context

This part belongs to the family of silicon NPN epitaxial transistors manufactured by Toshiba Semiconductor and Storage. It is engineered specifically for power switching roles where efficiency and speed are prioritized. The device represents a standard discrete semiconductor solution for controlling higher power loads in consumer and industrial electronic systems.

Single Bipolar Transistors Replacement Considerations

Consult official distributor databases for cross-references. Verify pinout compatibility and electrical parameter equivalence before substitution.

Single Bipolar Transistors FAQ

What is the maximum continuous collector current rating?

The maximum continuous collector current (IC) is rated at 5 A.

How does the saturation voltage vary with load current?

At a collector current of 2.5 A, the collector-emitter saturation voltage (VCE(sat)) has a typical value of 0.25 V and a maximum of 0.4 V.

Is this component suitable for use in medical instruments?

No, the product documentation explicitly states these products are not intended for medical instruments or other safety devices requiring extraordinarily high quality and reliability.