2SC4935-Y,Q(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC4935-Y,Q(J is a silicon NPN epitaxial type transistor utilizing the PCT process, designed for power amplifier applications. It features good hFE linearity with a collector-emitter breakdown voltage of 50 V and a maximum collector current of 3 A. The device supports a collector power dissipation of 10 W at Tc = 25°C and operates up to a junction temperature of 150°C. The transition frequency is typically 80 MHz, and it is housed in a JEDEC SC-67 package.

Single Bipolar Transistors Feature Summary

• Utilizes PCT process technology for enhanced performance
• Provides good DC current gain (hFE) linearity
• Supports high collector current and power dissipation capabilities

Single Bipolar Transistors Applications

• Power amplifier circuits
• General electronics applications including computers and office equipment
• Industrial robots and measuring equipment

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffixes against official Toshiba documentation to confirm exact binning and packaging specifications. Confirm RoHS compatibility status directly with the manufacturer or authorized distributors as environmental compliance details may vary by production lot. Ensure design reliability aligns with the Toshiba Semiconductor Reliability Handbook regarding derating concepts under heavy loads.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust NPN amplification with defined hFE ranges. The 'Y' suffix indicates a specific DC current gain classification of 120 to 240 at IC = 0.5 A. Evaluate thermal management requirements carefully, as power dissipation ratings are dependent on case temperature conditions. Ensure the operating voltage remains within the 50 V collector-emitter limit.

Single Bipolar Transistors Part Context

This part belongs to the 2SC4935 series of silicon NPN epitaxial transistors manufactured by Toshiba Semiconductor and Storage. These devices are engineered specifically for power amplifier applications where linear gain characteristics are critical. The series utilizes advanced PCT processing to achieve reliable performance in general electronic systems.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

Single Bipolar Transistors FAQ

What is the DC current gain range for the Y suffix?

The Y suffix indicates an hFE classification of 120 to 240 when measured at VCE = 2 V and IC = 0.5 A.

What is the maximum collector current rating?

The absolute maximum rating for collector current (IC) is 3 A.

Is this component suitable for aerospace or medical use?

No, the product is explicitly restricted from unintended uses such as aerospace, medical equipment, or nuclear facilities unless specifically permitted.