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Product Detailed Parameters
- Description：RF TRANS NPN 12V 4.5GHZ
- Series：-
- Mfr：CEL
- Package：Strip
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：4.5GHz
- Noise Figure (dB Typ @ f)：1.2dB @ 1GHz
- Gain：9dB
- Power - Max：125mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 7mA, 3V
- Current - Collector (Ic) (Max)：100mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-523
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The CEL 2SC5006-A is an NPN silicon RF bipolar transistor designed for low noise and small signal amplification in VHF to UHF bands. It operates at a maximum frequency of 4.5 GHz with a typical noise figure of 1.2 dB. The device supports a collector-emitter voltage of 12V and a collector current of 100mA, dissipating up to 125mW of power. Packaged in the SOT-523 surface-mount format, it provides high-frequency performance suitable for compact electronic designs requiring efficient signal processing.
Feature Summary
- Engineered for low noise applications in VHF and UHF frequency ranges
- Optimized for small signal amplification tasks
- Utilizes NPN epitaxial silicon construction for reliability
Applications
- Low noise amplifier circuits
- Small signal amplification stages
- VHF band receiver front ends
- UHF band communication systems
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revisions and specific ordering suffixes match project requirements. Check lifecycle status as availability may vary. Ensure storage and handling procedures comply with electrostatic discharge guidelines for sensitive semiconductor devices.
Selection Notes
Select this component when low noise figure is critical for VHF or UHF signal integrity. Consider the SOT-523 package constraints for PCB layout and thermal management. Evaluate the 12V voltage rating against circuit operating conditions. Compare noise performance metrics against alternative transistors to ensure optimal system sensitivity.
Part Context
This part belongs to the family of NPN epitaxial silicon transistors intended for RF applications. Similar models include the NE85619 and standard 2SC5006 variants from other manufacturers like NEC/Renesas. These components share functional characteristics for low noise amplification but may differ in packaging or specific electrical tolerances.
Replacement Considerations
Public confirmed substitutes include the NE85619 and generic 2SC5006 variants from NEC Electronics. Verify pinout compatibility and electrical parameter alignment before substitution. Note that different manufacturers may offer slight variations in noise figures or maximum ratings.
