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The CEL 2SC5007-T1-A is an NPN epitaxial silicon transistor belonging to the NE681 series, designed for low noise and high gain amplifier applications. It corresponds to package outline 19 (3 Pin Ultra Super Mini Mold). Key electrical characteristics include a gain bandwidth product of 7.0 GHz at VCE = 3 V and IC = 7 mA. The device exhibits a minimum noise figure of 1.4 dB at 1 GHz and 1.8 dB at 2 GHz under VCE = 8 V and IC = 7 mA conditions. Associated gain reaches 13.5 dB at 1 GHz. Forward current gain ranges from 50 to 250 at VCE = 8 V and IC = 20 mA. Total power dissipation is rated at 100 mW with a thermal resistance of 1000 °C/W.
Verify the specific ordering suffix against official documentation to confirm package type and tape/reel specifications. Confirm RoHS compliance status as it varies by manufacturer batch and region. Ensure the component meets the required EIAJ registered number standards for your application. Check for any design restrictions noted in the datasheet regarding new designs.
Select this component when a balance of low noise figure and high gain is required in the 1-4 GHz range. Consider the 100 mW power dissipation limit and 1000 °C/W thermal resistance for thermal management. Verify that the SOT-343 style package fits the board layout constraints. Compare noise parameters at specific bias points against system requirements.
This part is part of the NEC/CEL NE681 series of NPN silicon transistors. It shares core die characteristics with other variants like the NE68133, NE68135, and NE68139, differing primarily in packaging. The series is engineered for cost-effective low-noise amplification in high-frequency applications.
Direct replacements within the same family include the NE68133, NE68135, and NE68139, provided the package outline matches the design constraints. Cross-reference with the EIAJ registered number 2SC5007 for equivalent sourcing.