2SC5007-T1-A

2SC5007-T1-A

$1.11
  • Description:RF TRANS NPN 10V 7GHZ SOT-523
  • Series:-

SKU:f649b59855f9 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 10V 7GHZ SOT-523
  • Series:-
  • Mfr:CEL
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):10V
  • Frequency - Transition:7GHz
  • Noise Figure (dB Typ @ f):1.4dB @ 1GHz
  • Gain:12dB
  • Power - Max:125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 7mA, 3V
  • Current - Collector (Ic) (Max):65mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-523
  • Supplier Device Package:SOT-523
  • Grade:-
  • Qualification:-

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2SC5007-T1-A

Overview

The CEL 2SC5007-T1-A is an NPN epitaxial silicon transistor belonging to the NE681 series, designed for low noise and high gain amplifier applications. It corresponds to package outline 19 (3 Pin Ultra Super Mini Mold). Key electrical characteristics include a gain bandwidth product of 7.0 GHz at VCE = 3 V and IC = 7 mA. The device exhibits a minimum noise figure of 1.4 dB at 1 GHz and 1.8 dB at 2 GHz under VCE = 8 V and IC = 7 mA conditions. Associated gain reaches 13.5 dB at 1 GHz. Forward current gain ranges from 50 to 250 at VCE = 8 V and IC = 20 mA. Total power dissipation is rated at 100 mW with a thermal resistance of 1000 °C/W.

Feature Summary

  • Optimized for simultaneous low noise and high gain performance using a single matching point
  • Suitable for amplifier applications operating up to 4 GHz
  • Utilizes unique device characteristics to balance noise figure and gain requirements

Applications

  • Low noise amplifiers in RF circuits
  • High frequency signal processing
  • Amplifier stages up to 4 GHz

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and tape/reel specifications. Confirm RoHS compliance status as it varies by manufacturer batch and region. Ensure the component meets the required EIAJ registered number standards for your application. Check for any design restrictions noted in the datasheet regarding new designs.

Selection Notes

Select this component when a balance of low noise figure and high gain is required in the 1-4 GHz range. Consider the 100 mW power dissipation limit and 1000 °C/W thermal resistance for thermal management. Verify that the SOT-343 style package fits the board layout constraints. Compare noise parameters at specific bias points against system requirements.

Part Context

This part is part of the NEC/CEL NE681 series of NPN silicon transistors. It shares core die characteristics with other variants like the NE68133, NE68135, and NE68139, differing primarily in packaging. The series is engineered for cost-effective low-noise amplification in high-frequency applications.

Replacement Considerations

Direct replacements within the same family include the NE68133, NE68135, and NE68139, provided the package outline matches the design constraints. Cross-reference with the EIAJ registered number 2SC5007 for equivalent sourcing.

2SC5007-T1-A2SC5007-T1-A
$1.11
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