2SC5008-A

Overview

The CEL 2SC5008-A is an NPN epitaxial silicon transistor designed for low noise and small signal amplification across the VHF to L band spectrum. It utilizes a proprietary direct nitride passivated base surface process (NEST2) to achieve high current capability, excellent linearity, and a wide dynamic range. Key electrical parameters include a typical transition frequency (fT) of 8.0 GHz at VCE = 3 V and IC = 5 mA, a minimum operating temperature of -40°C, and a maximum operating temperature of +150°C. The device features ultra-low collector-emitter capacitance (Cre) of 0.3 pF typical at VCE = 3 V and IE = 0, ensuring minimal signal degradation in high-frequency applications.

Feature Summary

• Utilizes NEST2 fabrication technique with direct nitride passivated base surface for enhanced reliability and performance.
• Engineered for low voltage operation while maintaining high gain and low noise figure characteristics.
• Provides excellent linearity and wide dynamic range suitable for sensitive RF front-end stages.

Applications

• Low noise amplifier (LNA) circuits in VHF band receivers
• Small signal amplification modules in L band communication systems
• High-frequency signal processing components requiring high linearity

Procurement Notes

Verify component authenticity through authorized distribution channels due to potential availability constraints. Confirm RoHS compliance status and specific manufacturing lot dates prior to integration. Ensure storage conditions adhere to moisture sensitivity level requirements to prevent package damage during soldering processes.

Selection Notes

Select this component when designing circuits requiring high transition frequency and low noise figures in the VHF to L band range. Consider the Ultra Super Mini Mold package dimensions for PCB layout constraints. Evaluate thermal management needs given the wide operating temperature range and power dissipation capabilities inherent to the epitaxial silicon construction.

Part Context

This part belongs to the family of NPN silicon epitaxial transistors optimized for RF applications. It shares design heritage with similar NEC/Renesas devices focusing on miniaturization and high-frequency performance. The technology emphasizes direct nitride passivation to improve stability and reduce parasitic effects common in standard bipolar transistors.

Replacement Considerations

Cross-reference with other NPN RF transistors offering comparable fT and noise figures if supply is limited. Verify pinout compatibility and package dimensions before substituting. Ensure replacement parts meet the same voltage and current ratings for circuit integrity.