2SC5008-T1-A

Overview

The 2SC5008-T1-A is a silicon NPN RF transistor manufactured by CEL, designed for low-noise and high-gain amplification applications. It operates within the L to S band frequency range, with a specified operating frequency of 2 GHz. The device features an N-channel configuration and utilizes GaAs technology in an FTSMM-4 (M04) surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 4 V, a gate-source breakdown voltage of -3 V, and a continuous drain current of 120 mA. It exhibits a noise figure of 0.45 dB, a gain of 14 dB, and a power dissipation rating of 175 mW. The component supports a maximum operating temperature of +150°C.

Feature Summary

• Optimized for low-noise performance in L to S band radio frequency applications
• High gain capability suitable for amplifier stages
• Surface-mount packaging for automated assembly integration

Applications

• L-band low-noise amplifiers
• S-band low-noise amplifiers
• RF front-end modules requiring high gain and low noise

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer confirmation. Check for end-of-life status or product change notices prior to procurement. Ensure storage conditions comply with moisture sensitivity levels for surface-mount devices. Confirm package marking matches official datasheet specifications to prevent counterfeit substitution.

Selection Notes

Select this component for designs requiring specific L to S band noise figures and gain characteristics. Verify that the 4 V drain-source voltage rating aligns with the circuit supply requirements. Ensure the thermal management design accommodates the 175 mW power dissipation limit. Confirm compatibility with the FTSMM-4 footprint during PCB layout.

Part Context

This part belongs to the family of RF JFET transistors from CEL, specifically engineered for microwave and radio frequency applications. It serves as a discrete active component for signal conditioning in communication systems. The designation indicates a tape-and-reel packaging format for high-volume manufacturing.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer cross-reference guides for equivalent RF JFET devices with matching noise figures and package dimensions.