2SC5011-T1-A

Overview

The CEL 2SC5011-T1-A is an NPN silicon RF small signal transistor designed for ultra-high frequency applications. It serves as the JEITA equivalent to the NEC NE85618 and is housed in a compact SOT-343F (Package Code 18) surface-mount package. The device features a typical transition frequency of 6.5 GHz at a test frequency of 1 GHz with VCE set to 10V. Key electrical parameters include a maximum collector-emitter voltage of 12V, a maximum collector current of 100mA, and a typical noise figure of 1.1 dB. It provides a typical magnetic gain of 16 dB and a DC current gain of 120 under specified bias conditions.

Feature Summary

• Optimized for low noise amplification in high-frequency circuits
• High transition frequency suitable for UHF band operations
• Compact surface-mount footprint for space-constrained designs

Applications

• Low Noise Amplifiers (LNAs)
• RF front-end modules
• Wireless communication systems

Procurement Notes

Verify that the ordering suffix -T1-A corresponds to the specific tape-and-reel packaging configuration required for automated assembly. Confirm the component meets all necessary regulatory standards for the intended deployment region before finalizing procurement orders.

Selection Notes

Select this component when a low-noise NPN transistor with a 6.5 GHz transition frequency is required in a small outline package. Ensure the design accommodates the 12V maximum voltage rating and 100mA current limit while maintaining the specified 10V bias condition for optimal performance metrics.

Part Context

This part is listed within the CEL Silicon Bipolar Transistors catalog as a single discrete device. It is categorized alongside other RF transistors such as the NE662M04 and NE677M04, serving as a direct replacement or alternative to the NEC 2SC5011 series for designers requiring specific RF characteristics.

Replacement Considerations

The datasheet identifies the NEC NE85618 as the direct JEITA equivalent part number. Designers should verify pinout compatibility and thermal characteristics when substituting this component with other NPN RF transistors from different manufacturers.