2SC5012-A

Overview

The CEL 2SC5012-A is an NPN silicon epitaxial planar transistor designed for high-frequency radio frequency applications. It features a high gain bandwidth product with a typical transition frequency of 9 GHz. The device supports low voltage operation and provides low noise performance, making it suitable for high-gain amplifier circuits. It is housed in the SOT-343 surface-mount package.

Feature Summary

• High gain bandwidth product optimized for RF signal amplification
• Low noise characteristics ensuring clear signal integrity
• Designed for low voltage operational environments

Applications

• High frequency low noise amplifier stages
• RF front-end modules requiring high gain
• Microwave communication systems

Procurement Notes

Verify the specific ordering suffix to confirm the exact package type and tape-and-reel specifications. Confirm that the component status aligns with current production requirements, as availability may vary by manufacturer. Ensure the selected variant matches the required pinout and electrical tolerances for the target circuit design.

Selection Notes

Select this component when a high transition frequency and low noise figure are critical for the application. Consider the SOT-343 package constraints for PCB layout. Evaluate the trade-off between the high gain bandwidth and the low collector current rating to ensure it meets the power handling needs of the specific RF stage.

Part Context

This part belongs to the family of bipolar RF transistors manufactured by NEC/CEL. It is specifically engineered for microwave frequencies where standard transistors fail to provide adequate gain or noise performance. The 2SC5012 series is widely recognized in professional RF design for its reliability in high-frequency signal processing tasks.

Replacement Considerations

Public confirmed substitute part numbers include the 2SC5012-T1-A from CEL. Verify compatibility regarding pin configuration and thermal characteristics before substitution.